Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr.

Area of Science:

• Condensed Matter Physics
• Materials Science
• Magnetism

Background:

• Magnetic van der Waals (vdW) materials exhibit diverse spin configurations in reduced dimensions.
• A-type vdW antiferromagnets display interlayer antiferromagnetism tunable by external factors.
• Precisely characterizing interlayer spin orientation in vdW antiferromagnets is difficult due to material properties.

Purpose of the Study:

• To investigate layer-dependent interlayer antiferromagnetic spin reorientation in CrSBr.
• To understand the mechanisms governing spin reorientation in vdW antiferromagnets.
• To establish a magnetic phase diagram for CrSBr based on layer number.

Main Methods:

• Magnetotransport characterization of CrSBr.
• First-principles calculations.
• Development of a linear-chain model.

Main Results:

• An odd-even layer effect in interlayer spin reorientation was observed in CrSBr.
• This effect arises from competing interlayer exchange, magnetic anisotropy, and Zeeman energy.
• A quantitative, layer-dependent magnetic phase diagram was constructed.

Conclusions:

• The study demonstrates controllable interlayer antiferromagnetic spin reorientation in air-stable CrSBr.
• The findings highlight the role of layer number in magnetic behavior of vdW materials.
• This work provides insights into engineering magnetic properties of low-dimensional materials.