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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:
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Parallel Resonance01:23

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The parallel RLC circuit is an arrangement where the resistor (R), inductor (L), and capacitor (C) are all connected to the same nodes and, as a result, share the same voltage across them. The parallel RLC circuit is analyzed in terms of admittance (Y), which reflects the ease with which current can flow. The admittance is given by:
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Miniature Wide-Band Noise-Canceling CMOS LNA.

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This study presents a wide-band noise-canceling (NC) current conveyor (CC)-based CMOS low-noise amplifier (LNA). The novel design significantly reduces noise figure (NF) and achieves broadband performance in a compact area.

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Area of Science:

  • Electrical Engineering
  • Microelectronics
  • Analog Integrated Circuits

Background:

  • Low-noise amplifiers (LNAs) are critical components in radio frequency (RF) systems.
  • Achieving wide-band input matching and low noise simultaneously is challenging.
  • Traditional methods often require bulky inductors, increasing chip area and cost.

Purpose of the Study:

  • To present a wide-band noise-canceling (NC) current conveyor (CC)-based CMOS low-noise amplifier (LNA).
  • To achieve broadband performance with a compact area by avoiding bulky inductances.
  • To demonstrate significant noise figure (NF) reduction using an effective NC technique.

Main Methods:

  • Utilized a current conveyor (CC)-based approach for wide-band input matching.
  • Implemented a noise-canceling (NC) technique by subtracting input transistor noise.
  • Designed and simulated the LNA in a UMC 65-nm CMOS process.

Main Results:

  • Achieved a noise figure (NF) reduction from 4.8 dB to 3.2 dB.
  • Obtained a stable frequency response from 0 to 6.2 GHz.
  • Demonstrated a maximum gain of 15.3 dB, S11 < -10 dB, and IIP3 of 7.6 dBm.

Conclusions:

  • The proposed NC LNA offers a noteworthy performance trade-off in terms of gain, bandwidth, noise, and linearity.
  • The CC-based design enables broadband performance with a very small chip area (160 × 80 μm²).
  • The implementation proves effective for applications requiring high-performance LNAs with reduced noise and size.