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A g/I-Based Low-Power LNA for Ka-Band Applications.

David Galante-Sempere1, Jeffrey Torres-Clarke1, Javier Del Pino1

  • 1Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35001 Las Palmas de Gran Canaria, Spain.

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Summary

This study introduces a novel low-power low-noise amplifier (LNA) for 5G Ka-band applications. Utilizing the gm/ID methodology, it achieves excellent performance with minimal power consumption.

Keywords:
45 nmKa bandcascodegm/IDlow noise amplifierlow-powersilicon-on-insulator

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Area of Science:

  • Electrical Engineering
  • Radio Frequency (RF) and Microwave Engineering
  • Semiconductor Device Design

Background:

  • The demand for high-frequency communication systems, particularly for 5G New Radio (NR) in the n257 band, necessitates efficient Low-Noise Amplifiers (LNAs).
  • Traditional LNA designs often face trade-offs between power consumption, noise performance, and gain at high frequencies like Ka-band.
  • The gm/ID methodology offers a promising approach for optimizing transistor performance in moderate inversion, crucial for low-power RF circuit design.

Purpose of the Study:

  • To design and simulate a low-power, low-noise amplifier (LNA) optimized for Ka-band (28 GHz) 5G NR applications.
  • To apply the gm/ID methodology at high frequencies (Ka-band) for the first time, exploring its benefits in RF/MW scenarios.
  • To achieve a high figure of merit (FoM) by balancing gain, noise figure, and power consumption.

Main Methods:

  • Implementation of a cascode LNA architecture using 45 nm silicon-on-insulator (SOI) technology.
  • Application of the gm/ID methodology to optimize transistor operation in the moderate inversion region for enhanced efficiency.
  • Post-layout simulations were conducted to evaluate circuit performance, including gain, noise figure, and return loss.

Main Results:

  • The designed LNA achieves a very low power consumption of 1.98 mW from a 0.9 V supply.
  • The amplifier operates at a central frequency of 28 GHz, suitable for the 5G NR n257 band.
  • Post-layout simulations show a gain of 11.4 dB, a noise figure (NF) of 3.8 dB, and an input return loss (IRL) better than 12 dB.
  • The design demonstrates a remarkable figure of merit (FoM) compared to conventional approaches, with performance metrics comparable to other designs but with significantly lower power usage.

Conclusions:

  • The gm/ID methodology is effectively applied to a Ka-band LNA design, demonstrating its viability at high frequencies.
  • The proposed LNA offers a competitive solution for 5G Ka-band applications requiring high performance and ultra-low power consumption.
  • This design contributes to the advancement of efficient RF front-end components for next-generation wireless communication systems.