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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications.

David Galante-Sempere1, Sunil Lalchand Khemchandani1, Javier Del Pino1

  • 1Institute for Applied Microelectronics (IUMA), Department of Electronics and Automatic Engineering, University of Las Palmas de Gran Canaria (ULPGC), Campus Universitario de Tafira, 35017 Las Palmas de Gran Canaria, Spain.

Sensors (Basel, Switzerland)
|January 21, 2023
PubMed
Summary

A novel four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) achieves a 1.3 dB noise figure for 5G applications. This MMIC LNA utilizes a unique design methodology for optimal performance in the n258 frequency band.

Keywords:
5GK-bandelectromagnetic simulationgallium arsenideinput return losslow noise amplifiermonolithic microwave integrated circuitnoise figure

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Area of Science:

  • Electrical Engineering
  • Microwave Engineering
  • Semiconductor Device Physics

Background:

  • The demand for high-performance RF components is increasing with the rollout of 5G networks.
  • K-band frequencies (24.25-27.58 GHz) are crucial for enhanced mobile broadband services.
  • Low-noise amplifiers (LNAs) are critical for maintaining signal integrity in sensitive receiver systems.

Purpose of the Study:

  • To design and simulate a four-stage K-band MMIC LNA for the 5G n258 band.
  • To achieve a low noise figure (NF) and high gain.
  • To present a design methodology for optimizing LNA performance.

Main Methods:

  • Utilized UMS 100 nm GaAs pHEMT technology.
  • Employed Momentum EM post-layout simulations for performance analysis.
  • Focused on active device size and DC bias selection with source degeneration for NF minimization.
  • Implemented input matching network using a shunt stub and transmission line.

Main Results:

  • Achieved a minimum NF of 1.3 dB and a maximum gain of 34 dB.
  • Obtained return loss (|S11|) better than -10 dB across the 23-29 GHz band.
  • Reported a P1dB of -18 dBm and an OIP3 of 24.5 dBm.
  • The LNA operates at 2V with a current draw of 59.1 mA and a chip size of 3300 × 1800 µm².

Conclusions:

  • The presented MMIC LNA offers competitive performance compared to state-of-the-art solutions.
  • The design methodology effectively minimizes NF and simplifies input matching.
  • The circuit is well-suited for 5G n258 band applications requiring high sensitivity and gain.