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Line-rotated remapping for high-resolution electron backscatter diffraction.

Yongzhe Wang¹, Nicolas Brodusch², Raynald Gauvin²

¹The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxu Road, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

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|September 23, 2022

Summary

This summary is machine-generated.

A new method called line-rotated remapping (LRR) accurately analyzes electron backscatter diffraction patterns with significant rotations. This technique improves strain measurements in materials science by precisely mapping crystal orientations.

Keywords:

Elastic strain High-resolution EBSD Lattice rotation Line-rotated remapping

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Area of Science:

Materials Science
Crystallography
Electron Microscopy

Background:

Electron Backscatter Diffraction (EBSD) is crucial for analyzing material microstructures.
Accurate crystallographic orientation mapping is essential for understanding material properties.
Large lattice rotations in EBSD patterns pose challenges for conventional analysis methods.

Purpose of the Study:

To introduce a novel method, line-rotated remapping (LRR), for high-resolution EBSD pattern analysis.
To address the challenge of remapping EBSD patterns with large rotations.
To enhance the accuracy of strain and rotation measurements in materials.

Main Methods:

Developed line-rotated remapping (LRR) by modifying cross-correlation displacements based on Kikuchi lines and reference patterns.
Determined finite rotation matrices using Kikuchi line parameters to align test patterns with reference patterns.
Applied LRR to simulated silicon (Si) patterns and experimental nickel (Ni) single crystal samples.

Main Results:

Achieved measurement errors below 1.0 × 10^-3 for lattice rotations up to 26° in simulated Si patterns.
Demonstrated LRR's capability to quantitatively characterize rotations and elastic strains in a Ni single crystal under mechanical loading.
Observed that the maximum remappable angle decreases with specimen-screen distance, impacting matched Kikuchi lines.

Conclusions:

Line-rotated remapping (LRR) is a promising technique for improving strain measurements in EBSD, especially with large rotations.
LRR offers high accuracy for crystallographic orientation analysis in challenging EBSD datasets.
Further experimental validation is needed to fully assess LRR's performance, particularly regarding pattern center and image contrast.