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Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling.
Boris Zabelich1, Edgars Nitiss1, Anton Stroganov2
1Photonic Systems Laboratory (PHOSL), Ecole Polytechnique Fédérale de Lausanne, STI-IEM, LausanneCH-1015, Switzerland.
ACS Photonics
|October 25, 2022
Summary
Silicon nitride (Si3N4) integrated photonics now supports second-order nonlinear processes. Electric-field poling induces an effective second-order susceptibility (χ(2)), enabling electro-optic modulation on this platform.
Area of Science:
- Integrated photonics
- Materials science
- Nonlinear optics
Background:
- Silicon nitride (Si3N4) is a mature integrated photonic platform.
- Its centrosymmetric nature prevents second-order nonlinear optical processes.
- This limitation restricts its application in classical and quantum technologies.
Purpose of the Study:
- To enable second-order nonlinear processes in Si3N4 waveguides.
- To achieve effective second-order susceptibility (χ(2)) in Si3N4.
- To make linear electro-optic modulation accessible on the Si3N4 platform.
Main Methods:
- Thermally assisted electric-field poling was implemented.
- Charge carrier separation and depletion zone formation were induced.
- A numerical model was developed to simulate the poling process and calculate key parameters.
Main Results:
- A strong electric field of up to 20 V/μm was inscribed in the Si3N4 waveguide.
- An effective second-order susceptibility (χ(2)) was achieved.
- The diffusion coefficient and charge carrier concentration were calculated.
- Waveguide core size and charge carrier concentration significantly influence effective nonlinearity.
Conclusions:
- Electric-field poling successfully introduced second-order nonlinear effects into Si3N4 photonics.
- Linear electro-optic modulation is now feasible on this platform.
- Findings provide a foundation for developing advanced χ(2)-based devices in silicon nitride.
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