TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

In this study, we present an all-optical reflection modulator for the 2 µm communication band exploiting a nanogear-array metasurface and phase-change-material G e ₂ S b ₂ T e ₅ (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli, and this paper provides details on the optical and opto-thermal modeling techniques of GST. A numerical investigation reveals that the metastructure exhibits a conspicuous changeover from ∼99% absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable figure of merit of 49, so far the best modulation performance in this wavelength window, to our knowledge. In addition, real-time tracking of reflectance during phase transition manifests high-speed switching expending low energy per cycle, of the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for optical modulators for upcoming 2 µm communication technology.