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The Hall Effect01:30

The Hall Effect

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Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
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Linear Approximation in Frequency Domain01:26

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Linear systems are characterized by two main properties: superposition and homogeneity. Superposition allows the response to multiple inputs to be the sum of the responses to each individual input. Homogeneity ensures that scaling an input by a scalar results in the response being scaled by the same scalar.
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Gauss's Law: Planar Symmetry01:27

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A planar symmetry of charge density is obtained when charges are uniformly spread over a large flat surface. In planar symmetry, all points in a plane parallel to the plane of charge are identical with respect to the charges. Suppose the plane of the charge distribution is the xy-plane, and the electric field at a space point P with coordinates (x, y, z) is to be determined. Since the charge density is the same at all (x, y) - coordinates in the z = 0 plane, by symmetry, the electric field at P...
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Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Intrinsic Nonlinear Planar Hall Effect.

Yue-Xin Huang1, Xiaolong Feng1, Hui Wang1

  • 1Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.

Physical Review Letters
|April 7, 2023
PubMed
Summary
This summary is machine-generated.

We discovered a new intrinsic nonlinear planar Hall effect in crystals, driven by band geometry, not scattering. This effect is controllable and measurable, offering new material characterization and device applications.

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Area of Science:

  • Condensed matter physics
  • Solid-state physics
  • Materials science

Background:

  • Nonlinear transport phenomena are crucial for electronic devices.
  • Existing nonlinear effects often depend on scattering and symmetry.
  • A need exists for intrinsic, symmetry-flexible nonlinear transport mechanisms.

Purpose of the Study:

  • To propose and theoretically establish a novel intrinsic nonlinear planar Hall effect.
  • To demonstrate its band geometric origin, independent of scattering.
  • To explore its potential in nonmagnetic polar and chiral crystals.

Main Methods:

  • Theoretical formulation of the intrinsic nonlinear planar Hall effect.
  • Analysis of band geometry and symmetry constraints.
  • First-principles calculations.
  • Evaluation in Janus monolayer MoSSe.

Main Results:

  • The proposed effect scales quadratically with the electric field and linearly with the magnetic field.
  • It is less constrained by symmetry compared to other nonlinear transport effects.
  • The effect is experimentally measurable in materials like Janus monolayer MoSSe.
  • Characteristic angular dependence allows control over nonlinear output.

Conclusions:

  • The intrinsic nonlinear planar Hall effect offers a new avenue for understanding electron transport.
  • It provides a versatile tool for material characterization.
  • It presents a novel mechanism for advanced nonlinear device applications.