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Temperature Distribution in TaO Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy.

Jingjia Meng1, Jonathan M Goodwill1,2, Evgheni Strelcov2,3

  • 1Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.

ACS Applied Electronic Materials
|May 1, 2023
PubMed
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Scanning thermal microscopy reveals temperature differences in tantalum oxide memory devices. Anode polarity during electroformation and device resistance state influence filament hot spot characteristics, aiding technology advancement.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Transition-metal-oxide-based memory devices are crucial for non-volatile memory applications.
  • Understanding electroformation and switching mechanisms is key to improving device performance.
  • In operando characterization of these devices remains limited.

Purpose of the Study:

  • To investigate the physical changes and thermal characteristics of tantalum oxide (TaOₓ) memory devices during electroformation and switching.
  • To correlate device states (high/low resistance) and electroformation polarity with thermal footprints of the conductive filament.
  • To provide insights into the filament formation and rupture mechanisms.

Main Methods:

  • Utilized scanning thermal microscopy (STM) in a vacuum environment.

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  • Performed measurements on TaOₓ-based memory devices.
  • Analyzed devices electroformed with both positive and negative polarities.
  • Compared thermal footprints in high-resistance and low-resistance states.

    • Main Results:

    • Observed distinct surface temperature footprints of the conductive filament.
    • Higher peak temperatures and narrower distributions were found when the top electrode was the anode during electroformation.
    • The low-resistance state exhibited a lower peak temperature and wider distribution compared to the high-resistance state.
    • Results support a model of a hot spot formation due to a filament gap near the anode.

    Conclusions:

    • The anode polarity during electroformation significantly impacts the thermal properties of the conductive filament in TaOₓ memory devices.
    • The conductive filament's thermal signature changes with device resistance state, indicating gap formation/rupture.
    • These findings advance the understanding of operating mechanisms in resistive switching memory devices.