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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories
Shuo Qiao1, Yuanyuan Qiu1, Yue Lu1
1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Nano Letters
|April 8, 2024
Summary
Researchers developed a controlled rolling method for molybdenum disulfide (MoS2) nanosheets into nanoscrolls. These MoS2 nanoscrolls enable high-performance memory devices with excellent on/off ratios and multilevel storage capabilities.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Material dimensionality significantly influences physical properties.
- Two-dimensional (2D) semiconductors like molybdenum disulfide (MoS2) offer potential for advanced electronics.
- Controlled conversion of 2D materials to one-dimensional (1D) nanostructures is crucial for device applications but challenging.
Purpose of the Study:
- To develop a controllable method for fabricating molybdenum disulfide (MoS2) nanoscrolls from 2D nanosheets.
- To investigate the electronic and memory properties of the resulting MoS2 nanoscrolls.
- To explore the potential of these nanostructures for miniaturized memory devices.
Main Methods:
- A modified solvent evaporation-induced rolling process was employed to create MoS2 nanoscrolls.
- The process was optimized to halt at intermediate states, achieving high yield and axial uniformity.
- Fabrication and characterization of nanoscroll-based memory devices using field-effect transistor architecture.
Main Results:
- MoS2 nanoscrolls were successfully synthesized with high yield and good axial uniformity.
- The fabricated nanoscroll memory devices demonstrated a high on/off ratio of approximately 10^4.
- Devices exhibited a retention time exceeding 10^3 seconds and enabled multilevel data storage.
Conclusions:
- The developed rolling process offers precise control over MoS2 nanoscroll formation.
- The unique properties of these 1D nanostructures allow for manipulation of memory characteristics.
- MoS2 nanoscroll-based field-effect transistors show significant promise for developing advanced, miniaturized memory technologies.

