High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Poly(p-phenylene ethynylene) (PPE) are one-dimensional molecular wires with unique electronic properties.
• Field-effect transistors (FETs) are crucial electronic devices, and their efficiency is a key research area.
• The International Roadmap for Device and Systems (IRDS) sets future performance benchmarks for electronic devices.

Purpose of the Study:

• To investigate the efficiency limits of PPE molecular wire FETs using first-principles quantum transport.
• To evaluate the performance of gate-all-around (GAA) PPE molecular wire FETs against future (2028) IRDS requirements.
• To explore the potential of these devices for downscaling Moore's Law.

Main Methods:

• Utilizing first-principles quantum transport simulations.
• Analyzing the impact of gate length (L) and underlap (UL) on FET performance.
• Comparing simulated device metrics (on-state current, power-delay product, delay) with IRDS 2022 benchmarks for 2028.

Main Results:

• Optimized n-type GAA PPE molecular wire FETs (L=5 nm, UL=1-3 nm) meet 2028 High Performance (HP) targets for current, power, and delay.
• Optimized p-type GAA PPE molecular wire FETs (L=5, 3 nm, UL=1-3 nm) also meet 2028 HP targets.
• Specific configurations of p-type FETs meet 2028 Low Power (LP) targets for current and delay.
• Demonstrated the first 1D carbon-based ambipolar FET.

Conclusions:

• GAA PPE molecular wire FETs show promise for achieving 2028 performance goals set by the IRDS.
• These devices represent a potential pathway for extending Moore's Law scaling down to 3 nm.
• The development of 1D carbon-based ambipolar FETs opens new avenues in molecular electronics.