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Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure
Jiale Su1, Zhenxin Yang1, Xuanhe Li1
1Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, China. qiangzhu@ynu.edu.cn.
Abstract:
This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI3 films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI3-based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI3-based devices.
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