Electronics and Optoelectronics Based on Tellurium.

Area of Science:

• Materials Science
• Condensed Matter Physics

Background:

• Group-VIA tellurium (Te) is a 1D material with van der Waals bonded molecular chains.
• Its triangular crystal lattice provides unique electronic, optoelectronic, thermoelectric, piezoelectric, chiral, and topological properties.
• Te's bandgap is thickness-dependent, varying from 0.31 eV (bulk) to 1.04 eV (monolayer).

Purpose of the Study:

• To provide a comprehensive review of tellurium nanostructures.
• To discuss synthesis methods, fundamental properties, and device applications of Te.
• To highlight future research directions and challenges in Te-based materials.

Main Methods:

• Review of existing literature on tellurium crystal structure and properties.
• Discussion of synthesis techniques including solution phase, chemical vapor deposition (CVD), and physical vapor deposition (PVD).
• Analysis of device applications in electronics, optoelectronics, sensors, and field-effect transistors (FETs).

Main Results:

• Te nanostructures possess diverse properties suitable for advanced applications.
• Various synthesis methods enable the fabrication of Te-centered devices.
• Performance optimization strategies for Te-based FETs are explored.

Conclusions:

• Tellurium nanostructures offer significant potential for next-generation electronic and optoelectronic devices.
• Further research is needed to overcome challenges and fully realize Te's capabilities.
• Continued exploration of Te synthesis and device integration is crucial for technological advancement.