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Reduction of Alkenes: Catalytic Hydrogenation02:13

Reduction of Alkenes: Catalytic Hydrogenation

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Alkenes undergo reduction by the addition of molecular hydrogen to give alkanes. Because the process generally occurs in the presence of a transition-metal catalyst, the reaction is called catalytic hydrogenation.
Metals like palladium, platinum, and nickel are commonly used in their solid forms — fine powder on an inert surface. As these catalysts remain insoluble in the reaction mixture, they are referred to as heterogeneous catalysts.
The hydrogenation process takes place on the...
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Hydrogen Bonds

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A hydrogen bond is formed when a weakly positive hydrogen atom already bonded to one electronegative atom (for example, the oxygen in the water molecule) is attracted to another electronegative atom from another polar molecule, such as water (H2O), hydrogen fluoride (HF), or ammonia (NH3). The huge electronegativity difference between the H atom (2.1) and the atom to which it is bonded (4.0 for an F atom, 3.5 for an O atom, or 3.0 for an N atom), combined with the very small size of an H atom...
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Regioselectivity of Electrophilic Additions to Alkenes: Markovnikov's Rule02:17

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If a set of reactants can yield multiple constitutional isomers, but one of the isomers is obtained as the major product, the reaction is said to be regioselective. In such reactions, bond formation or breaking is favored at one reaction site over others.
The hydrohalogenation of an unsymmetrical alkene can yield two haloalkane products, depending on which vinylic carbon takes up the halogen. However, one product usually predominates, where hydrogen adds to the vinylic carbon bearing the...
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Reduction of Alkenes: Asymmetric Catalytic Hydrogenation02:17

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Catalytic hydrogenation of alkenes is a transition-metal catalyzed reduction of the double bond using molecular hydrogen to give alkanes. The mode of hydrogen addition follows syn stereochemistry.
The metal catalyst used can be either heterogeneous or homogeneous. When hydrogenation of an alkene generates a chiral center, a pair of enantiomeric products is expected to form. However, an enantiomeric excess of one of the products can be facilitated using an enantioselective reaction or an...
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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Radical Substitution: Hydrogenolysis of Alkyl Halides with Tributyltin Hydride01:26

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Radical substitution reactions can be used to remove functional groups from molecules. The hydrogenolysis of alkyl halides is one such reaction, where the weak Sn–H bond in tributyltin hydride reacts with alkyl halides to form alkanes. Here, the reagent Bu3SnH yields tributyltin halide as a byproduct.
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Hydrogen Production and Utilization in a Membrane Reactor
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The Role of Hydrogen in ReRAM.

Horatio R J Cox1, Matthew K Sharpe2, Callum McAleese2

  • 1Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.

Advanced Materials (Deerfield Beach, Fla.)
|October 15, 2024
PubMed
Summary
This summary is machine-generated.

Hydrogen in resistive random access memory (ReRAM) devices significantly impacts resistance switching. This study quantifies hydrogen levels and diffusion in ReRAM, revealing its crucial role in device performance.

Keywords:
ReRAMToF‐ERDAdefectshydrogenmemristor

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A Simple, Low-cost, and Robust System to Measure the Volume of Hydrogen Evolved by Chemical Reactions with Aqueous Solutions
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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Transistor gate oxides show hydrogen content affects breakdown.
  • Hydrogen is often overlooked in resistive random access memory (ReRAM) device modeling and measurement.
  • ReRAM devices utilize reversible dielectric breakdown for memory operation.

Purpose of the Study:

  • To quantitatively measure hydrogen concentration in ReRAM devices.
  • To investigate hydrogen diffusion across interfaces in SiOx ReRAM devices during operation.
  • To establish the impact of hydrogen on ReRAM resistance switching behavior.

Main Methods:

  • Quantitative measurements using multiple techniques.
  • Depth profiling of hydrogen concentration through ReRAM devices.
  • Application of Secondary Ion Mass Spectrometry (SIMS) for hydrogen diffusion analysis.

Main Results:

  • ReRAM devices, regardless of manufacturing origin, contain significant hydrogen concentrations.
  • Hydrogen diffusion across SiOx interfaces was measured as a result of device operation.
  • Empirical depth profiling of hydrogen in ReRAM devices was achieved for the first time.

Conclusions:

  • Hydrogen presence and diffusion are critical factors influencing ReRAM resistance switching.
  • Controlling fabrication parameters (temperature, precursors, ambient exposure) can minimize hydrogen.
  • Utilizing oxynitride or TiO2 capping layers can prevent hydrogen diffusion during operation.
  • Informed improvements in ReRAM performance are achievable through hydrogen management.