Cryogenic quantum computer control signal generation using high-electron-mobility transistors.

Area of Science:

• Solid-state physics
• Quantum computing hardware
• Cryogenic electronics

Background:

• Quantum processors require efficient cryogenic electronics for generating control signals.
• Existing cryogenic solutions face challenges in area footprint, noise, stability, and power dissipation.
• Multiplexed signal generation is crucial for reducing input/output complexity.

Purpose of the Study:

• To demonstrate quasi-static bias generation using integrated capacitors with cryogenic high-electron mobility transistor (HEMT) arrays.
• To explore multi-channel bias generation capabilities at cryogenic temperatures.
• To evaluate the performance advantages of HEMTs over silicon-based complementary metal-oxide-semiconductor (CMOS) for cryogenic applications.

Main Methods:

• Integration of capacitors with cryogenic HEMT arrays.
• Utilizing gate pulses controlled in time and frequency domains for bias generation.
• Characterization of circuit performance at 4 Kelvin (K).

Main Results:

• Demonstrated quasi-static bias generation and multi-channel operation.
• Achieved improved bias signal variability and a reduced subthreshold swing of ~6 mV/decade at 4 K.
• Observed a very low threshold voltage of 80 mV at 4 K, enabling operation below 1 V drive bias.

Conclusions:

• Cryogenic HEMT circuits offer significant advantages over silicon-based CMOS for signal generation in quantum computers.
• The demonstrated technology enables efficient, low-voltage, high-speed cryogenic control signal generation.
• HEMTs present an attractive platform for future quantum computing electronics.