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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Dielectric Polarization in a Capacitor

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...

Spherical and Cylindrical Capacitor

Spherical and Cylindrical Capacitor

A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field,...

Capacitor With A Dielectric

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

Capacitors

Capacitors

Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
When a voltage source is connected to a capacitor, positive and negative charges accumulate on the opposite plates. This accumulation generates a potential difference that equals the product of the...

Energy Stored in a Capacitor

Energy Stored in a Capacitor

When an archer pulls the string in a bow, he saves the work done in the form of elastic potential energy. When he releases the string, the potential energy is released as kinetic energy of the arrow. A capacitor works on the same principle in which the work done is saved as electric potential energy. The potential energy (UC) could be calculated by measuring the work done (W) to charge the capacitor.

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Updated: May 31, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Cross-Point Ferroelectric Hf_0.5Zr_0.5O₂ Capacitors for Remanent Polarization-Driven In-Memory Computing.

Minjong Lee¹, Peng Zhou¹, Heber Hernandez-Arriaga²

¹Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.

|January 23, 2025

Summary

This summary is machine-generated.

Ferroelectric hafnium zirconium oxide (HZO) capacitors offer reliable in-memory computing. Utilizing remanent polarization switching in HZO synapses enhances accuracy for neuromorphic applications.

Keywords:

Ferroelectric Hf0.5Zr0.5O2 (HZO)binary weight in-memory computing (IMC)neuromorphic computing vector-matrix multiplication (VMM)

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Published on: November 11, 2013

Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Ferroelectric hafnium zirconium oxide (HZO) capacitors are explored for in-memory computing (IMC) due to nonvolatility and process compatibility.
Existing IMC approaches using HZO resistance/capacitance states for vector-matrix multiplication (VMM) face accuracy and reliability challenges.

Purpose of the Study:

To propose and validate a novel IMC approach using the remanent polarization (Pr) switching of ferroelectric HZO capacitor synapses.
To enhance accuracy and reliability in neuromorphic IMC applications.

Main Methods:

Experimental demonstration of a pattern recognition task using Pr switching in HZO capacitor synapses.
Large-scale simulations of a complex inference task to evaluate performance and robustness.

Main Results:

Voltage readout of Pr switching demonstrated excellent accuracy and reliability due to a high on/off ratio.
Simulations achieved high accuracy and immunity to device variations in complex inference tasks.

Conclusions:

The proposed Pr switching paradigm in ferroelectric HZO capacitor synapses shows significant promise for near-term neuromorphic IMC.
This approach offers a reliable and accurate method for implementing synaptic functions in advanced computing architectures.