Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026

Same author

Scalable Quantum Current Source on Commercial CMOS Process Technology.

Nano letters·2026

Same author

Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity.

Nature·2025

Same author

Scalable entanglement of nuclear spins mediated by electron exchange.

Science (New York, N.Y.)·2025

Same author

Spin-qubit control with a milli-kelvin CMOS chip.

Nature·2025

Same author

Bell inequality violation in gate-defined quantum dots.

Nature communications·2025

Same journal

High Pressure Synthesis of Ultrasmall Nanodiamonds with Nitrogen Vacancy Centers.

Nano letters·2026

Same journal

Efros-Shklovskii Law at the Thinnest Limit of a Material.

Nano letters·2026

Same journal

Oxygen Electronic Configuration Modulation Triggering Reversible Anionic Redox Chemistry toward High Voltage Tolerant Sodium Layered Oxide.

Nano letters·2026

Same journal

Development of a Nanoscale Protein-Protein Mapping of PDE4 Interface-Disrupting Peptides.

Nano letters·2026

Same journal

Lubricin-Protected Plasmonic Nanoslides Enable Stable, Reusable, Nonfouling, and Ultrasensitive Biomimetic-SERS Sensing for the Detection of Vancomycin in Unprocessed Whole Blood.

Nano letters·2026

Same journal

Forcing a Molecule to Switch: Quantifying Mechanical Control at the Atomic Scale.

Nano letters·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Sep 19, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

A 2 × 2 Quantum Dot Array in Silicon with Fully Tunable Pairwise Interdot Coupling.

Wee Han Lim^1,2, Tuomo Tanttu^1,2, Tony Youn¹

¹School of Electrical Engineering and Telecommunications, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia.

|June 16, 2025

Summary

This summary is machine-generated.

Researchers developed a 2D silicon quantum dot array for scalable quantum computing. This advancement in metal-oxide-semiconductor spin qubits is crucial for building larger, fault-tolerant quantum processors.

Keywords:

MOS quantum dots silicon tunability tunnel couplings

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: Sep 19, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

Quantum Computing
Semiconductor Physics
Materials Science

Background:

Linear arrays of semiconductor spin qubits have surpassed 10 qubits, but scaling to 2D is necessary for fault-tolerant quantum computing.
Fabrication challenges arise from increased gate electrode density in 2D arrays, complicating qubit control and entanglement.
Interstitial exchange gates are required for two-qubit operations in dense 2D qubit structures.

Purpose of the Study:

To present a novel 2D array of silicon metal-oxide-semiconductor (MOS) quantum dots.
To demonstrate tunable interdot coupling between all neighboring quantum dots in the 2D array.
To provide a foundational benchmark for advancing MOS spin qubit technology into the 2D regime.

Main Methods:

Fabrication of a 2D array of silicon MOS quantum dots.
Characterization of the device at 4.2 K.
Measurement of interdot coupling tunability and control over double- and triple-dot configurations.

Main Results:

The 2D MOS quantum dot array exhibits exceptional tunability.
The device successfully forms and isolates both double- and triple-dot configurations.
Achieved tunnel coupling control spanning up to 30 decades per volt.

Conclusions:

The developed 2D quantum dot array addresses key fabrication and control challenges for scaling quantum processors.
The demonstrated tunable interdot coupling is critical for implementing two-qubit gates in dense 2D qubit architectures.
These findings offer vital technical feedback and establish a benchmark for future 2D MOS spin qubit development.