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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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Fast Superdiffusive Transport of Dipolar Excitons in 3R-Stacked MoS2 Bilayers.

Gbenga S Agunbiade1, Neema Rafizadeh1, Ting Zheng1

  • 1Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States.

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|November 20, 2025
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Summary

Rhombohedral MoS2 bilayers intrinsically create dipolar excitons, enabling electric-field control. These dipolar excitons exhibit rapid, superdiffusive transport, unlike slower dynamics in other MoS2 forms.

Keywords:
3R stackingMoS2diffusionexcitontransition-metal dichalcogenidetwo-dimensional materialultrafast spectroscopy

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Excitons enable energy transport without charge flow but lack external control due to electrical neutrality.
  • Creating dipolar excitons, with spatially separated electrons and holes, allows for electric-field manipulation and strong dipole-dipole interactions.

Purpose of the Study:

  • To investigate rhombohedral (3R) stacked MoS2 bilayers as an intrinsic platform for realizing and studying dipolar excitons.
  • To explore the transport dynamics and potential applications of these engineered dipolar excitons.

Main Methods:

  • Utilized transient absorption microscopy to observe exciton dynamics.
  • Fabricated and characterized rhombohedral (3R) stacked MoS2 bilayers.

Main Results:

  • Demonstrated that 3R MoS2 bilayers intrinsically generate aligned dipolar excitons due to broken inversion symmetry and built-in polarization.
  • Observed rapid and superdiffusive transport of dipolar excitons in 3R MoS2 bilayers.
  • Contrasted these findings with slow, diffusive exciton transport in MoS2 monolayers, bulk crystals, and 2H bilayers.

Conclusions:

  • Dipolar interactions significantly drive exciton transport in 3R MoS2 bilayers.
  • 3R-stacked transition-metal dichalcogenide bilayers serve as a promising material platform for high-mobility exciton transport.
  • This system offers potential for tunable optoelectronic functionalities and the exploration of novel dipole-mediated quantum phases.