Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Lessons fromα-RuCl<sub>3</sub>for pursuing quantum spin liquid physics in atomically thin materials.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same author

Transient Absorption Spectroscopy of NbOI<sub>2</sub>.

Nano letters·2025
Same author

Fast Superdiffusive Transport of Dipolar Excitons in 3R-Stacked MoS<sub>2</sub> Bilayers.

ACS nano·2025
Same author

Planar Optical Antenna-Driven Brightness Enhancement of Interface-Confined Hexagonal Boron Nitride Single-Photon Arrays for Scalable Room-Temperature Quantum Chips.

ACS nano·2025
Same author

Photodoping of graphene with long-lived electrons by interfacing with Janus WSSe.

Nanoscale horizons·2025
Same author

High Responsivity, Wide Spectral Range, Large Anisotropy Ratio, and Self-Driven Detection of MoS<sub>2</sub>/BP Heterostructure with Interfacial Regulation.

ACS applied materials & interfaces·2025

Related Experiment Video

Updated: Jun 3, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

Stacking-Polarity-Controlled Interlayer Photocarrier Dynamics in MoSe2/MoS2 Heterostructures.

Gbenga S Agunbiade1, Ting Zheng1, Hui Zhao1

  • 1Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States.

Nano Letters
|June 2, 2026
PubMed
Summary

Stacking polarity offers a new way to control photocarrier dynamics in molybdenum diselenide/molybdenum disulfide (MoSe2/MoS2) heterostructures. This discovery enables precise tuning for advanced optoelectronic applications.

Keywords:
carrier dynamicsrhombohedral stackingtransient absorptiontransition metal dichalcogenidevan der Waals heterostructure

More Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Related Experiment Videos

Last Updated: Jun 3, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Optoelectronic applications of van der Waals heterostructures depend on controlling photocarrier dynamics.
  • Current tuning strategies for these dynamics are limited in determinism and spatial uniformity.

Purpose of the Study:

  • To investigate stacking polarity as a global control parameter for photocarrier dynamics in MoSe2/MoS2 heterostructures.
  • To resolve stacking-dependent interlayer charge-transfer dynamics and interlayer exciton lifetimes.

Main Methods:

  • Ultrafast pump-probe spectroscopy was employed to study MoSe2/MoS2 heterostructures.
  • Hexagonal (2H) and rhombohedral (3R) MoS2 bilayers were compared, with engineered interface terminations in 3R stacking.

Main Results:

  • Charge transfer in 2H heterostructures was faster than experimental resolution.
  • 3R heterostructures exhibited time-resolvable charge transfer, slowing from 0.25 to 0.37 ps based on stacking polarity.
  • Interlayer exciton lifetimes were tuned from approximately 40 ps to 160 ps.

Conclusions:

  • Stacking polarity serves as a global control parameter for photocarrier dynamics in MoSe2/MoS2 heterostructures.
  • Stacking-induced layer polarization in 3R MoS2 modulates interfacial wave function overlap, influencing charge transfer and exciton dynamics.