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Related Concept Videos

Carrier Transport01:21

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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Related Experiment Video

Updated: Mar 3, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Phase-Coherent Transport in Two-Dimensional Tellurium Flakes.

Mohammad Hafijur Rahaman1, Nathan Tanner Sawyers1, Mourad Benamara2

  • 1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States.

ACS Applied Electronic Materials
|March 2, 2026
PubMed
Summary
This summary is machine-generated.

This study fabricates thin elemental tellurium (Te) flakes, revealing high hole mobility and quantum phenomena like Coulomb blockade and Fabry-Pérot interference. These high-quality Te flakes show promise for topological superconductivity and spintronics.

Keywords:
chiral materialfabry−perotphase coherentquantum dotsemiconductorspin splittingtelluriumweyl physics

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Elemental tellurium (Te) is a van der Waals material with a chiral crystal structure.
  • Te exhibits predicted topological properties, making it of significant research interest.

Purpose of the Study:

  • To fabricate and investigate quantum transport properties of elemental tellurium flakes with varying thicknesses.
  • To explore the potential of Te as a material for advanced electronic devices and fundamental physics research.

Main Methods:

  • Fabrication of thin tellurium (Te) flakes.
  • Comprehensive quantum transport measurements at cryogenic temperatures (30 K and <50 mK).
  • Application of magnetic fields to probe transport characteristics.

Main Results:

  • Achieved high hole mobility up to 1000 cm²/V·s in a 17 nm thick Te flake at 30 K.
  • Observed transition from Coulomb blockade to Fabry-Pérot interference in thin Te flakes at low temperatures.
  • Demonstrated enhanced Fabry-Pérot oscillation visibility in thinner flakes and clear Zeeman splitting under magnetic fields.

Conclusions:

  • High-quality thin Te flakes exhibit rich quantum transport phenomena.
  • Te is a promising material for exploring topological superconductivity.
  • Thin Te flakes are suitable for developing low-power spintronic applications.