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Nano Letters|December 21, 2025
Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect TransistorsMayukh Das, Krishnendu Mukhopadhyay, Md Sajjad Alam, et al.
ACS Applied Materials & Interfaces|May 26, 2023
Radiation Resilient Two-Dimensional ElectronicsThomas F Schranghamer, Andrew Pannone, Harikrishnan Ravichandran, et al.
Nature Communications|November 21, 2025
3D Integration of functionally diverse 2D materials for optoelectronic reservoir computingAnirban Chowdhury, Anshul Rasyotra, Harikrishnan Ravichandran, et al.
ACS Nano|May 19, 2025
Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin TransistorsAnshul Rasyotra, Mayukh Das, Dipanjan Sen, et al.
Nano Letters|April 6, 2026
Exploiting the Photoresponse in LiInP2Se6 for Image ProcessingAnshul Rasyotra, Anirban Chowdhury, Dipanjan Sen, et al.
ACS Nano|May 23, 2014
Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistorsAli Razavieh, Parsian Katal Mohseni, Kyooho Jung, et al.
ACS Nano|December 29, 2025
Complementary Photoresponse in van der Waals Heterostructures for Insect-Inspired Neuromorphic VisionDipanjan Sen, Anshul Rasyotra, Anirban Chowdhury, et al.
ACS Nano|August 4, 2018
Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution MicroscopyTarak K Patra, Fu Zhang, Daniel S Schulman, et al.
Nature Communications|July 21, 2026
Hardware acceleration of simulated annealing for constraint satisfaction problemsAndrew Pannone, Rishikesh T Nair, Pranav Krishnan, et al.
ACS Nano|February 14, 2019
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial MonolayersXiaotian Zhang, Fu Zhang, Yuanxi Wang, et al.
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