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Nano Letters|January 20, 2016
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for ApplicationAmirhasan Nourbakhsh, Ahmad Zubair, Mildred S Dresselhaus, et al.
ACS Applied Materials & Interfaces|December 15, 2020
Impact of Al<sub>2</sub>O<sub>3</sub> Passivation on the Photovoltaic Performance of Vertical WSe<sub>2</sub> Schottky Junction Solar CellsElaine McVay, Ahmad Zubair, Yuxuan Lin, et al.
Nanoscale|April 28, 2017
Subthreshold swing improvement in MoS<sub>2</sub> transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO<sub>2</sub>/HfO<sub>2</sub> gate dielectric stackAmirhasan Nourbakhsh, Ahmad Zubair, Sameer Joglekar, et al.
Plos One|June 26, 2018
A high precision method for length-based separation of carbon nanotubes using bio-conjugation, SDS-PAGE and silver stainingZahra Borzooeian, Mohammad E Taslim, Omid Ghasemi, et al.
Nano Letters|April 18, 2017
Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN EmitterAhmad Zubair, Amirhasan Nourbakhsh, Jin-Yong Hong, et al.
Nanoscale|December 2, 2016
Highly efficient and stable MoS<sub>2</sub> FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coatingCésar J Lockhart de la Rosa, Amirhasan Nourbakhsh, Markus Heyne, et al.
Nanotechnology|August 8, 2014
Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applicationsAmirhasan Nourbakhsh, Tarun K Agarwal, Alexander Klekachev, et al.
Nanotechnology|October 5, 2010
Bandgap opening in oxygen plasma-treated grapheneAmirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch, et al.
Nanoscale|June 4, 2015
Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxidesAmirhasan Nourbakhsh, Christoph Adelmann, Yi Song, et al.
Nano Letters|December 15, 2016
MoS<sub>2</sub> Field-Effect Transistor with Sub-10 nm Channel LengthAmirhasan Nourbakhsh, Ahmad Zubair, Redwan N Sajjad, et al.
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