Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Changhwan Shin

Showing results (1-10 of 43) with videos related to

Pageof 5
Sort By:
Journal of Nanoscience and Nanotechnology|April 28, 2019
Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect TransistorJinyoung Park, Changhwan Shin
Micromachines|July 27, 2022
Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold VoltagesDongwoo Lee, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation Techniques for Nanoelectromechanical (NEM) RelayKaram Cho, Changhwan Shin
Nanotechnology|June 7, 2021
Experimental study of threshold voltage shift for Si:HfO<sub>2</sub>based ferroelectric field effect transistorTaehwan Jung, Changhwan Shin
Micromachines|December 23, 2020
Recent Studies on Supercapacitors with Next-Generation StructuresJuho Sung, Changhwan Shin
Nanotechnology|November 8, 2023
Grain-size adjustment in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>ferroelectric film to improve the switching time in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric capacitorJiyeong Yoon, Yejoo Choi, Changhwan Shin
Micromachines|August 27, 2021
Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate DeviceJeewon Park, Wansu Jang, Changhwan Shin
Nano Convergence|June 3, 2020
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorChankeun Yoon, Seungjun Moon, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 28, 2019
Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect TransistorHyungki Cho, Jaemin Shin, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 28, 2019
Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on HysteresisEunah Ko, Jaemin Shin, Changhwan Shin
Pageof 5

Showing results (1-10 of 43) with videos related to

Sort By:
Pageof 5
Journal of Nanoscience and Nanotechnology|April 28, 2019
Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect TransistorJinyoung Park, Changhwan Shin
Micromachines|July 27, 2022
Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold VoltagesDongwoo Lee, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation Techniques for Nanoelectromechanical (NEM) RelayKaram Cho, Changhwan Shin
Nanotechnology|June 7, 2021
Experimental study of threshold voltage shift for Si:HfO<sub>2</sub>based ferroelectric field effect transistorTaehwan Jung, Changhwan Shin
Micromachines|December 23, 2020
Recent Studies on Supercapacitors with Next-Generation StructuresJuho Sung, Changhwan Shin
Nanotechnology|November 8, 2023
Grain-size adjustment in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>ferroelectric film to improve the switching time in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric capacitorJiyeong Yoon, Yejoo Choi, Changhwan Shin
Micromachines|August 27, 2021
Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate DeviceJeewon Park, Wansu Jang, Changhwan Shin
Nano Convergence|June 3, 2020
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorChankeun Yoon, Seungjun Moon, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 28, 2019
Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect TransistorHyungki Cho, Jaemin Shin, Changhwan Shin
Journal of Nanoscience and Nanotechnology|April 28, 2019
Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on HysteresisEunah Ko, Jaemin Shin, Changhwan Shin
Pageof 5