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Journal of Nanoscience and Nanotechnology|June 15, 2019
Forming-Free SiGeO/TiO Resistive Random Access Memories Featuring Large Current Distribution WindowsChun-Hu Cheng, Albert Chin, Hsiao-Hsuan Hsu
Chemosphere|November 26, 2023
Remarkably fast and reusable photocatalysis by UV annealed Cu2O-SnO2 p-n heterojunctionPheiroijam Pooja, Albert Chin
ACS Applied Materials & Interfaces|July 26, 2016
New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap SemiconductorsCheng Wei Shih, Albert Chin
Journal of Nanoscience and Nanotechnology|September 11, 2015
TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance DensityChun-Hu Cheng, Hsiao-Hsuan Hsu, Kun-i Chou
Nanomaterials (Basel, Switzerland)|January 6, 2021
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Scientific Reports|February 11, 2017
A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory ArrayMohammed Zackriya, Harish M Kittur, Albert Chin
Nanomaterials (Basel, Switzerland)|February 13, 2025
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma EffectWei Ting Fan, Pheiroijam Pooja, Albert Chin
Nanomaterials (Basel, Switzerland)|October 31, 2020
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Nanomaterials (Basel, Switzerland)|June 27, 2023
Superior High Transistor's Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFETPheiroijam Pooja, Chun Che Chien, Albert Chin
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