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Daeseok Lee

Showing results (11-20 of 23) with videos related to

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Scientific Reports|August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse deviceHyejin Kim, Jongseon Seo, Seojin Cho, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAMJeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
ACS Applied Materials & Interfaces|May 29, 2026
TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural NetworkSion Kim, Minsu Kang, Yuna Kim, et al.
Nanotechnology|November 14, 2018
Titanium-oxide based nanoscale and embeddable subzero temperature sensor using MIT deformation characteristicsChuljun Lee, Myungjun Kim, Sang-Mo Koo, et al.
ACS Nano|May 5, 2026
Energy- and Area-Efficient Ionic-Switch Activation Neuron for Monolithic 3D Neural Network ArchitecturesYuna Kim, Seojin Cho, Minsu Kang, et al.
Scientific Reports|December 2, 2021
Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic systemGeonhui Han, Chuljun Lee, Jae-Eun Lee, et al.
Nanotechnology|July 25, 2012
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devicesSeonghyun Kim, Daeseok Lee, Jubong Park, et al.
Micromachines|March 26, 2022
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-ReviewHeebum Kang, Jongseon Seo, Hyejin Kim, et al.
Nanotechnology|April 11, 2019
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changesJaesung Park, Chuljun Lee, Myunghoon Kwak, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 8, 2014
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memoryDaeseok Lee, Jaesung Park, Jaehyuk Park, et al.
Pageof 3

Showing results (11-20 of 23) with videos related to

Sort By:
Pageof 3
Scientific Reports|August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse deviceHyejin Kim, Jongseon Seo, Seojin Cho, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAMJeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
ACS Applied Materials & Interfaces|May 29, 2026
TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural NetworkSion Kim, Minsu Kang, Yuna Kim, et al.
Nanotechnology|November 14, 2018
Titanium-oxide based nanoscale and embeddable subzero temperature sensor using MIT deformation characteristicsChuljun Lee, Myungjun Kim, Sang-Mo Koo, et al.
ACS Nano|May 5, 2026
Energy- and Area-Efficient Ionic-Switch Activation Neuron for Monolithic 3D Neural Network ArchitecturesYuna Kim, Seojin Cho, Minsu Kang, et al.
Scientific Reports|December 2, 2021
Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic systemGeonhui Han, Chuljun Lee, Jae-Eun Lee, et al.
Nanotechnology|July 25, 2012
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devicesSeonghyun Kim, Daeseok Lee, Jubong Park, et al.
Micromachines|March 26, 2022
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-ReviewHeebum Kang, Jongseon Seo, Hyejin Kim, et al.
Nanotechnology|April 11, 2019
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changesJaesung Park, Chuljun Lee, Myunghoon Kwak, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 8, 2014
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memoryDaeseok Lee, Jaesung Park, Jaehyuk Park, et al.
Pageof 3