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International Journal of Molecular Sciences|September 9, 2022
Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic ApplicationJongmin Park, Hyunwoong Park, Daewon Chung, et al.
Physical Chemistry Chemical Physics : PCCP|November 6, 2025
Multifunctional ferroelectric synaptic memristors based on HfAlOx with enhanced Pavlovian learning and physical reservoir computing systemsGwangmin An, Seungjun Lee, Yeongkyo Seo, et al.
Materials (Basel, Switzerland)|December 23, 2022
Non-Volatile Memory and Synaptic Characteristics of TiN/CeOx/Pt RRAM DevicesHoesung Ha, Juyeong Pyo, Yunseok Lee, et al.
Materials (Basel, Switzerland)|February 25, 2023
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN MemristorsYoungboo Cho, Jihyung Kim, Myounggon Kang, et al.
The Journal of Chemical Physics|July 2, 2024
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computingDongyeol Ju, Jungwoo Lee, Sungjun Kim, et al.
Materials (Basel, Switzerland)|September 28, 2023
Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Junwon Jang, et al.
Nanomaterials (Basel, Switzerland)|September 28, 2023
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and ComputingMuhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Materials (Basel, Switzerland)|February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal DevicesJuyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Nanotechnology|April 22, 2020
Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applicationsMuhammad Ismail, Arqum Hashmi, Anwar Manzoor Rana, et al.
Ultrasonography (Seoul, Korea)|November 27, 2020
Artificial intelligence in musculoskeletal ultrasound imagingYiRang Shin, Jaemoon Yang, Young Han Lee, et al.
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