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Hyunsang Hwang

Showing results (11-20 of 57) with videos related to

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ACS Applied Materials & Interfaces|March 8, 2022
Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters OptimizationJongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 10, 2023
Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device EngineeringRevannath Dnyandeo Nikam, Jongwon Lee, Kyumin Lee, et al.
Science Advances|July 8, 2016
Organic core-sheath nanowire artificial synapses with femtojoule energy consumptionWentao Xu, Sung-Yong Min, Hyunsang Hwang, et al.
Frontiers in Neuroscience|July 18, 2022
Linear Frequency Modulation of NbO<sub>2</sub>-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural NetworkDonguk Lee, Myonghoon Kwak, Jongwon Lee, et al.
Nanotechnology|October 12, 2023
High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysisJiho Kim, Ohhyuk Kwon, Kyumin Lee, et al.
Nanotechnology|April 27, 2021
Effects of high pressure oxygen annealing on Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>ferroelectric deviceHyungwoo Kim, Alireza Kashir, Seungyeol Oh, et al.
Nanotechnology|July 11, 2022
Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistorSunhyeong Lee, Jongwon Lee, Junyoung Lee, et al.
Nanotechnology|December 7, 2023
Enhancement of NbO<sub>2</sub>-based oscillator neuron device performance via cryogenic operationOhhyuk Kwon, Seongjae Heo, Dongmin Kim, et al.
Nanoscale Research Letters|August 13, 2014
Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memorySangheon Lee, Jiyong Woo, Daeseok Lee, et al.
Nanotechnology|March 1, 2019
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systemsJongwon Lee, Seokjae Lim, Myonghoon Kwak, et al.
Pageof 6

Showing results (11-20 of 57) with videos related to

Sort By:
Pageof 6
ACS Applied Materials & Interfaces|March 8, 2022
Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters OptimizationJongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 10, 2023
Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device EngineeringRevannath Dnyandeo Nikam, Jongwon Lee, Kyumin Lee, et al.
Science Advances|July 8, 2016
Organic core-sheath nanowire artificial synapses with femtojoule energy consumptionWentao Xu, Sung-Yong Min, Hyunsang Hwang, et al.
Frontiers in Neuroscience|July 18, 2022
Linear Frequency Modulation of NbO<sub>2</sub>-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural NetworkDonguk Lee, Myonghoon Kwak, Jongwon Lee, et al.
Nanotechnology|October 12, 2023
High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysisJiho Kim, Ohhyuk Kwon, Kyumin Lee, et al.
Nanotechnology|April 27, 2021
Effects of high pressure oxygen annealing on Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>ferroelectric deviceHyungwoo Kim, Alireza Kashir, Seungyeol Oh, et al.
Nanotechnology|July 11, 2022
Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistorSunhyeong Lee, Jongwon Lee, Junyoung Lee, et al.
Nanotechnology|December 7, 2023
Enhancement of NbO<sub>2</sub>-based oscillator neuron device performance via cryogenic operationOhhyuk Kwon, Seongjae Heo, Dongmin Kim, et al.
Nanoscale Research Letters|August 13, 2014
Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memorySangheon Lee, Jiyong Woo, Daeseok Lee, et al.
Nanotechnology|March 1, 2019
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systemsJongwon Lee, Seokjae Lim, Myonghoon Kwak, et al.
Pageof 6