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Hyunsang Hwang

Showing results (31-40 of 57) with videos related to

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Nanoscale|November 26, 2016
In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interfaceKyungjoon Baek, Sangsu Park, Jucheol Park, et al.
Nanotechnology|February 17, 2017
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memoryFekadu Gochole Aga, Jiyong Woo, Jeonghwan Song, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 1, 2021
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic ComputingRevannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, et al.
Nanotechnology|November 17, 2021
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>devices by control of oxygen-deficient layerManoj Yadav, Alireza Kashir, Seungyeol Oh, et al.
ACS Applied Materials & Interfaces|October 3, 2024
Demonstration of 1 V Reliable FeRAM Operation: <i>V</i><sub>c</sub> Engineering Using Quasi-Chirality of Hf<sub>1-</sub>Zr<sub></sub>O<sub>2</sub> in a Nanolaminate StructureHojung Jang, Alireza Kashir, Tony Schenk, et al.
Nanotechnology|January 13, 2018
Effect of conductance linearity and multi-level cell characteristics of TaO<sub>x</sub>-based synapse device on pattern recognition accuracy of neuromorphic systemChanghyuck Sung, Seokjae Lim, Hyungjun Kim, et al.
Nanotechnology|November 8, 2011
Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applicationsXinjun Liu, Sharif Md Sadaf, Myungwoo Son, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS<sub>2</sub> FETs Using Buried-Gate StructuresJu-Ah Lee, Jongwon Yoon, Seungkwon Hwang, et al.
Nanotechnology|August 11, 2011
Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layerHyejung Choi, Byung-Sang Choi, Tae-Wook Kim, et al.
Nanotechnology|March 19, 2021
Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al<sub>2</sub>O<sub>3</sub>barrier layerKyumin Lee, Myounghoon Kwak, Wooseok Choi, et al.
Pageof 6

Showing results (31-40 of 57) with videos related to

Sort By:
Pageof 6
Nanoscale|November 26, 2016
In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interfaceKyungjoon Baek, Sangsu Park, Jucheol Park, et al.
Nanotechnology|February 17, 2017
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memoryFekadu Gochole Aga, Jiyong Woo, Jeonghwan Song, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 1, 2021
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic ComputingRevannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, et al.
Nanotechnology|November 17, 2021
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>devices by control of oxygen-deficient layerManoj Yadav, Alireza Kashir, Seungyeol Oh, et al.
ACS Applied Materials & Interfaces|October 3, 2024
Demonstration of 1 V Reliable FeRAM Operation: <i>V</i><sub>c</sub> Engineering Using Quasi-Chirality of Hf<sub>1-</sub>Zr<sub></sub>O<sub>2</sub> in a Nanolaminate StructureHojung Jang, Alireza Kashir, Tony Schenk, et al.
Nanotechnology|January 13, 2018
Effect of conductance linearity and multi-level cell characteristics of TaO<sub>x</sub>-based synapse device on pattern recognition accuracy of neuromorphic systemChanghyuck Sung, Seokjae Lim, Hyungjun Kim, et al.
Nanotechnology|November 8, 2011
Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applicationsXinjun Liu, Sharif Md Sadaf, Myungwoo Son, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS<sub>2</sub> FETs Using Buried-Gate StructuresJu-Ah Lee, Jongwon Yoon, Seungkwon Hwang, et al.
Nanotechnology|August 11, 2011
Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layerHyejung Choi, Byung-Sang Choi, Tae-Wook Kim, et al.
Nanotechnology|March 19, 2021
Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al<sub>2</sub>O<sub>3</sub>barrier layerKyumin Lee, Myounghoon Kwak, Wooseok Choi, et al.
Pageof 6