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Hyunsang Hwang

Showing results (41-50 of 57) with videos related to

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Journal of Nanoscience and Nanotechnology|August 2, 2012
Low-power and controllable memory window in Pt/Pr0.7Ca0.3MnO3/yttria-stabilized zirconia/W resistive random-access memory devicesXinjun Liu, Kuyyadi P Biju, Jubong Park, et al.
Nanotechnology|July 25, 2012
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devicesSeonghyun Kim, Daeseok Lee, Jubong Park, et al.
ACS Applied Materials & Interfaces|March 24, 2025
Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access MemoryGeonhui Han, Jongseon Seo, Junghoon Park, et al.
Nanotechnology|April 11, 2019
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changesJaesung Park, Chuljun Lee, Myunghoon Kwak, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 13, 2017
Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching MechanismByeong-Gyu Chae, Jae-Bok Seol, Jeong-Hwan Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 8, 2014
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memoryDaeseok Lee, Jaesung Park, Jaehyuk Park, et al.
Scientific Reports|May 6, 2015
Electronic system with memristive synapses for pattern recognitionSangsu Park, Myonglae Chu, Jongin Kim, et al.
Nanotechnology|May 7, 2009
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structureTae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, et al.
Nanotechnology|November 22, 2014
Hardware implementation of associative memory characteristics with analogue-type resistive-switching deviceKibong Moon, Sangsu Park, Junwoo Jang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 7, 2025
High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS<sub>2</sub> Buffer Layer Under Low Thermal BudgetSeungkwon Hwang, Kyumin Lee, Laeyong Jung, et al.
Pageof 6

Showing results (41-50 of 57) with videos related to

Sort By:
Pageof 6
Journal of Nanoscience and Nanotechnology|August 2, 2012
Low-power and controllable memory window in Pt/Pr0.7Ca0.3MnO3/yttria-stabilized zirconia/W resistive random-access memory devicesXinjun Liu, Kuyyadi P Biju, Jubong Park, et al.
Nanotechnology|July 25, 2012
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devicesSeonghyun Kim, Daeseok Lee, Jubong Park, et al.
ACS Applied Materials & Interfaces|March 24, 2025
Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access MemoryGeonhui Han, Jongseon Seo, Junghoon Park, et al.
Nanotechnology|April 11, 2019
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changesJaesung Park, Chuljun Lee, Myunghoon Kwak, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 13, 2017
Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching MechanismByeong-Gyu Chae, Jae-Bok Seol, Jeong-Hwan Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 8, 2014
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memoryDaeseok Lee, Jaesung Park, Jaehyuk Park, et al.
Scientific Reports|May 6, 2015
Electronic system with memristive synapses for pattern recognitionSangsu Park, Myonglae Chu, Jongin Kim, et al.
Nanotechnology|May 7, 2009
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structureTae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, et al.
Nanotechnology|November 22, 2014
Hardware implementation of associative memory characteristics with analogue-type resistive-switching deviceKibong Moon, Sangsu Park, Junwoo Jang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 7, 2025
High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS<sub>2</sub> Buffer Layer Under Low Thermal BudgetSeungkwon Hwang, Kyumin Lee, Laeyong Jung, et al.
Pageof 6