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JMIR Medical Informatics|August 5, 2020
Prediction of Cardiac Arrest in the Emergency Department Based on Machine Learning and Sequential Characteristics: Model Development and Retrospective Clinical Validation StudySungjun Hong, Sungjoo Lee, Jeonghoon Lee, et al.
Nanoscale|December 10, 2016
A homogeneous atomic layer MoS2(1-x)Se2x alloy prepared by low-pressure chemical vapor deposition, and its propertiesSima Umrao, Jaeho Jeon, Su Min Jeon, et al.
ACS Nano|January 2, 2025
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect TransistorsJingjie Niu, Donggyu Kim, Jie Li, et al.
ACS Nano|September 25, 2025
Asymmetric Contact van der Waals Ferroelectric Transistors for Self-Powered Multifunctional Artificial Visual SystemRajiv Kumar Pandey, Sungpyo Baek, Nayeong Lee, et al.
Nano Convergence|March 18, 2023
Anisotropy of impact ionization in WSe2 field effect transistorsTaeho Kang, Haeju Choi, Jinshu Li, et al.
ACS Nano|August 5, 2025
More-than-Moore Approaches Implemented Using van der Waals HeterostructuresSangmin Lee, Yeong Kwon Kim, Jongmin Noh, et al.
ACS Nano|October 26, 2023
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing ApplicationsBiswajit Das, Sungpyo Baek, Jingjie Niu, et al.
Nanoscale|October 1, 2024
Carrier type and density dependence of impact ionization characteristics in WSe2Haeju Choi, Jinshu Li, Taeho Kang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric TransistorSangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Nanoscale|March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistorChanwoo Kang, Haeju Choi, Hyeonje Son, et al.
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