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Juyeong Pyo

Showing results (1-10 of 7) with videos related to

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Nanomaterials (Basel, Switzerland)|July 9, 2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO<sub>x</sub> Thin LayerJuyeong Pyo, Hoesung Ha, Sungjun Kim
Materials (Basel, Switzerland)|March 29, 2023
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO<sub>x</sub>/Al Resistive Random Access Memory DevicesJung-Kyu Lee, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Non-Volatile Memory and Synaptic Characteristics of TiN/CeO<sub>x</sub>/Pt RRAM DevicesHoesung Ha, Juyeong Pyo, Yunseok Lee, et al.
Materials (Basel, Switzerland)|February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal DevicesJuyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Materials (Basel, Switzerland)|October 28, 2023
Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic ComputingJuyeong Pyo, Junwon Jang, Dongyeol Ju, et al.
Materials (Basel, Switzerland)|December 23, 2022
Forming-Free Tunable Analog Switching in WO<sub>x</sub>/TaO<sub>x</sub> Heterojunction for Emulating Electronic SynapsesChandreswar Mahata, Juyeong Pyo, Beomki Jeon, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|July 9, 2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO<sub>x</sub> Thin LayerJuyeong Pyo, Hoesung Ha, Sungjun Kim
Materials (Basel, Switzerland)|March 29, 2023
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO<sub>x</sub>/Al Resistive Random Access Memory DevicesJung-Kyu Lee, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Non-Volatile Memory and Synaptic Characteristics of TiN/CeO<sub>x</sub>/Pt RRAM DevicesHoesung Ha, Juyeong Pyo, Yunseok Lee, et al.
Materials (Basel, Switzerland)|February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal DevicesJuyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Materials (Basel, Switzerland)|October 28, 2023
Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic ComputingJuyeong Pyo, Junwon Jang, Dongyeol Ju, et al.
Materials (Basel, Switzerland)|December 23, 2022
Forming-Free Tunable Analog Switching in WO<sub>x</sub>/TaO<sub>x</sub> Heterojunction for Emulating Electronic SynapsesChandreswar Mahata, Juyeong Pyo, Beomki Jeon, et al.
Pageof 1