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Kunsik Sung

Showing results (1-10 of 4) with videos related to

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Journal of Nanoscience and Nanotechnology|July 18, 2013
Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltageKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|November 30, 2011
High-side nLDMOS design for ensuring breakdown voltages over 100 VKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|November 23, 2011
Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistorKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|September 13, 2012
Breakdown characteristics of high-side lateral double-diffused metal oxide semiconductor devicesKunsik Sung, Kwangsik Kim, Taeyoung Won
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Journal of Nanoscience and Nanotechnology|July 18, 2013
Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltageKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|November 30, 2011
High-side nLDMOS design for ensuring breakdown voltages over 100 VKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|November 23, 2011
Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistorKunsik Sung, Taeyoung Won
Journal of Nanoscience and Nanotechnology|September 13, 2012
Breakdown characteristics of high-side lateral double-diffused metal oxide semiconductor devicesKunsik Sung, Kwangsik Kim, Taeyoung Won
Pageof 1