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Nature Communications|October 29, 2025
Large-scale crossbar arrays based on three-terminal MoS2 memtransistorsThomas F Schranghamer, Andrew Pannone, Jishnu M Kumar, et al.Nature Communications|December 5, 2024
A stochastic encoder using point defects in two-dimensional materialsHarikrishnan Ravichandran, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, et al.ACS Nano|July 25, 2023
Observation of Rich Defect Dynamics in Monolayer MoS2Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, et al.Nature|January 10, 2024
Three-dimensional integration of two-dimensional field-effect transistorsDarsith Jayachandran, Rahul Pendurthi, Muhtasim Ul Karim Sadaf, et al.ACS Nano|August 3, 2023
Dilute Rhenium Doping and its Impact on Defects in MoS2Riccardo Torsi, Kyle T Munson, Rahul Pendurthi, et al.Nature|June 11, 2025
A complementary two-dimensional material-based one instruction set computerSubir Ghosh, Yikai Zheng, Musaib Rafiq, et al.Nature Communications|February 16, 2026
van der Waals dielectrics for threshold engineering in two-dimensional field effect transistorsDipanjan Sen, Harikrishnan Ravichandran, Safdar Imam, et al.ACS Nano|October 9, 2023
Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and DopingAaryan Oberoi, Ying Han, Sergei P Stepanoff, et al.Nature Materials|November 18, 2022
Active pixel sensor matrix based on monolayer MoS2 phototransistor arrayAkhil Dodda, Darsith Jayachandran, Andrew Pannone, et al.Nature Nanotechnology|July 23, 2024
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistorsRahul Pendurthi, Najam U Sakib, Muhtasim Ul Karim Sadaf, et al.Pageof 17