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Mengwei Si

Showing results (11-20 of 30) with videos related to

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Nanotechnology|December 1, 2021
First demonstration of robust tri-gate<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>nano-membrane field-effect transistorsHagyoul Bae, Tae Joon Park, Jinhyun Noh, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 24, 2025
Van der Waals Ferroelectric CuCrP<sub>2</sub>S<sub>6</sub>-Enabled Hysteresis-Free Negative Capacitance Field-Effect TransistorsHan Chen, Yinfeng Long, Shiyu Zhang, et al.
Applied Physics Letters|June 25, 2024
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxideMengwei Si, Xiao Lyu, Pragya R Shrestha, et al.
Nanoscale|January 26, 2016
Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistorsXuefei Li, Yuchen Du, Mengwei Si, et al.
Nano Letters|May 18, 2013
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide filmsHan Liu, Mengwei Si, Sina Najmaei, et al.
ACS Nano|March 2, 2021
Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor JunctionMengwei Si, Zhuocheng Zhang, Sou-Chi Chang, et al.
ACS Nano|December 20, 2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriersHan Liu, Mengwei Si, Yexin Deng, et al.
Nano Letters|December 29, 2020
Why In<sub>2</sub>O<sub>3</sub> Can Make 0.7 nm Atomic Layer Thin TransistorsMengwei Si, Yaoqiao Hu, Zehao Lin, et al.
ACS Applied Materials & Interfaces|January 5, 2022
Ionic Control over Ferroelectricity in 2D Layered van der Waals CapacitorsSabine M Neumayer, Mengwei Si, Junkang Li, et al.
Nano Letters|March 31, 2025
Are There High-Density Deep States in an Atomic-Layer-Deposited Indium-Gallium-Zinc Oxide Thin Film?Liankai Zheng, Lijuan Xing, Zhiyu Lin, et al.
Pageof 3

Showing results (11-20 of 30) with videos related to

Sort By:
Pageof 3
Nanotechnology|December 1, 2021
First demonstration of robust tri-gate<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>nano-membrane field-effect transistorsHagyoul Bae, Tae Joon Park, Jinhyun Noh, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 24, 2025
Van der Waals Ferroelectric CuCrP<sub>2</sub>S<sub>6</sub>-Enabled Hysteresis-Free Negative Capacitance Field-Effect TransistorsHan Chen, Yinfeng Long, Shiyu Zhang, et al.
Applied Physics Letters|June 25, 2024
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxideMengwei Si, Xiao Lyu, Pragya R Shrestha, et al.
Nanoscale|January 26, 2016
Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistorsXuefei Li, Yuchen Du, Mengwei Si, et al.
Nano Letters|May 18, 2013
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide filmsHan Liu, Mengwei Si, Sina Najmaei, et al.
ACS Nano|March 2, 2021
Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor JunctionMengwei Si, Zhuocheng Zhang, Sou-Chi Chang, et al.
ACS Nano|December 20, 2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriersHan Liu, Mengwei Si, Yexin Deng, et al.
Nano Letters|December 29, 2020
Why In<sub>2</sub>O<sub>3</sub> Can Make 0.7 nm Atomic Layer Thin TransistorsMengwei Si, Yaoqiao Hu, Zehao Lin, et al.
ACS Applied Materials & Interfaces|January 5, 2022
Ionic Control over Ferroelectricity in 2D Layered van der Waals CapacitorsSabine M Neumayer, Mengwei Si, Junkang Li, et al.
Nano Letters|March 31, 2025
Are There High-Density Deep States in an Atomic-Layer-Deposited Indium-Gallium-Zinc Oxide Thin Film?Liankai Zheng, Lijuan Xing, Zhiyu Lin, et al.
Pageof 3