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Min Sup Choi

Showing results (1-10 of 25) with videos related to

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Nanoscale|May 1, 2015
Carrier transport at the metal-MoS2 interfaceFaisal Ahmed, Min Sup Choi, Xiaochi Liu, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 16, 2021
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and ProspectsXiaochi Liu, Min Sup Choi, Euyheon Hwang, et al.
ACS Nano|August 19, 2014
Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronicsMin Sup Choi, Deshun Qu, Daeyeong Lee, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 20, 2022
Recent Progress in 1D Contacts for 2D-Material-Based DevicesMin Sup Choi, Nasir Ali, Tien Dat Ngo, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 5, 2023
Modulation of Contact Resistance of Dual-Gated MoS<sub>2</sub> FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal ContactsTien Dat Ngo, Tuyen Huynh, Hanggyo Jung, et al.
Nano Letters|November 20, 2023
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer DopingTien Dat Ngo, Tuyen Huynh, Inyong Moon, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 23, 2024
Advances and Applications of Oxidized van der Waals Transition Metal DichalcogenidesBrian S Y Kim, Tien Dat Ngo, Yasir Hassan, et al.
Nanoscale|June 11, 2016
Passivated ambipolar black phosphorus transistorsDewu Yue, Daeyeong Lee, Young Dae Jang, et al.
Scientific Reports|February 11, 2014
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistorsHua-Min Li, Dae-Yeong Lee, Min Sup Choi, et al.
Nano Letters|December 23, 2024
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic ElectrodesHyokwang Park, Hoseong Shin, Nasir Ali, et al.
Pageof 3

Showing results (1-10 of 25) with videos related to

Sort By:
Pageof 3
Nanoscale|May 1, 2015
Carrier transport at the metal-MoS2 interfaceFaisal Ahmed, Min Sup Choi, Xiaochi Liu, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 16, 2021
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and ProspectsXiaochi Liu, Min Sup Choi, Euyheon Hwang, et al.
ACS Nano|August 19, 2014
Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronicsMin Sup Choi, Deshun Qu, Daeyeong Lee, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 20, 2022
Recent Progress in 1D Contacts for 2D-Material-Based DevicesMin Sup Choi, Nasir Ali, Tien Dat Ngo, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 5, 2023
Modulation of Contact Resistance of Dual-Gated MoS<sub>2</sub> FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal ContactsTien Dat Ngo, Tuyen Huynh, Hanggyo Jung, et al.
Nano Letters|November 20, 2023
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer DopingTien Dat Ngo, Tuyen Huynh, Inyong Moon, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 23, 2024
Advances and Applications of Oxidized van der Waals Transition Metal DichalcogenidesBrian S Y Kim, Tien Dat Ngo, Yasir Hassan, et al.
Nanoscale|June 11, 2016
Passivated ambipolar black phosphorus transistorsDewu Yue, Daeyeong Lee, Young Dae Jang, et al.
Scientific Reports|February 11, 2014
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistorsHua-Min Li, Dae-Yeong Lee, Min Sup Choi, et al.
Nano Letters|December 23, 2024
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic ElectrodesHyokwang Park, Hoseong Shin, Nasir Ali, et al.
Pageof 3