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Nanomaterials (Basel, Switzerland)|October 23, 2020
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO ElectrodeChandreswar Mahata, Myounggon Kang, Sungjun Kim
Nanoscale Research Letters|June 10, 2022
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic SystemChandreswar Mahata, Muhammad Ismail, Myounggon Kang, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming ProcessMinkang Kim, Dongyeol Ju, Myounggon Kang, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect TransistorKyul Ko, Myounggon Kang, Jongwook Jeon, et al.
Materials (Basel, Switzerland)|February 25, 2023
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO<sub>X</sub>/TaN MemristorsYoungboo Cho, Jihyung Kim, Myounggon Kang, et al.
Nanomaterials (Basel, Switzerland)|September 28, 2023
SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and ComputingMuhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nanoscale Research Letters|June 24, 2022
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic EngineeringMuhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2018
Analysis on Self Heating Effect for a Trenched Source/Drain Structure in Triple-Stacked Nanowire FETHyunsuk Kim, Do-Kyun Son, Ilho Myeong, et al.
Micromachines|April 27, 2024
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory DevicesSangki Cho, Sueyeon Kim, Myounggon Kang, et al.
Nano Convergence|July 10, 2023
Mimicking biological synapses with a-HfSiO<sub>x</sub>-based memristor: implications for artificial intelligence and memory applicationsMuhammad Ismail, Maria Rasheed, Chandreswar Mahata, et al.
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