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JMIR Medical Informatics
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August 5, 2020
Prediction of Cardiac Arrest in the Emergency Department Based on Machine Learning and Sequential Characteristics: Model Development and Retrospective Clinical Validation Study
Sungjun Hong, Sungjoo Lee, Jeonghoon Lee, et al.
Nanoscale
|
December 10, 2016
A homogeneous atomic layer MoS<sub>2(1-x)</sub>Se<sub>2x</sub> alloy prepared by low-pressure chemical vapor deposition, and its properties
Sima Umrao, Jaeho Jeon, Su Min Jeon, et al.
ACS Nano
|
January 2, 2025
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors
Jingjie Niu, Donggyu Kim, Jie Li, et al.
ACS Nano
|
September 25, 2025
Asymmetric Contact van der Waals Ferroelectric Transistors for Self-Powered Multifunctional Artificial Visual System
Rajiv Kumar Pandey, Sungpyo Baek, Nayeong Lee, et al.
Nano Convergence
|
March 18, 2023
Anisotropy of impact ionization in WSe<sub>2</sub> field effect transistors
Taeho Kang, Haeju Choi, Jinshu Li, et al.
ACS Nano
|
August 5, 2025
More-than-Moore Approaches Implemented Using van der Waals Heterostructures
Sangmin Lee, Yeong Kwon Kim, Jongmin Noh, et al.
ACS Nano
|
October 26, 2023
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications
Biswajit Das, Sungpyo Baek, Jingjie Niu, et al.
Nanoscale
|
October 1, 2024
Carrier type and density dependence of impact ionization characteristics in WSe<sub>2</sub>
Haeju Choi, Jinshu Li, Taeho Kang, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Nanoscale
|
March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistor
Chanwoo Kang, Haeju Choi, Hyeonje Son, et al.
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Showing results (11-20 of 113) with videos related to
Sort By:
Page
of 12
JMIR Medical Informatics
|
August 5, 2020
Prediction of Cardiac Arrest in the Emergency Department Based on Machine Learning and Sequential Characteristics: Model Development and Retrospective Clinical Validation Study
Sungjun Hong, Sungjoo Lee, Jeonghoon Lee, et al.
Nanoscale
|
December 10, 2016
A homogeneous atomic layer MoS<sub>2(1-x)</sub>Se<sub>2x</sub> alloy prepared by low-pressure chemical vapor deposition, and its properties
Sima Umrao, Jaeho Jeon, Su Min Jeon, et al.
ACS Nano
|
January 2, 2025
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors
Jingjie Niu, Donggyu Kim, Jie Li, et al.
ACS Nano
|
September 25, 2025
Asymmetric Contact van der Waals Ferroelectric Transistors for Self-Powered Multifunctional Artificial Visual System
Rajiv Kumar Pandey, Sungpyo Baek, Nayeong Lee, et al.
Nano Convergence
|
March 18, 2023
Anisotropy of impact ionization in WSe<sub>2</sub> field effect transistors
Taeho Kang, Haeju Choi, Jinshu Li, et al.
ACS Nano
|
August 5, 2025
More-than-Moore Approaches Implemented Using van der Waals Heterostructures
Sangmin Lee, Yeong Kwon Kim, Jongmin Noh, et al.
ACS Nano
|
October 26, 2023
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications
Biswajit Das, Sungpyo Baek, Jingjie Niu, et al.
Nanoscale
|
October 1, 2024
Carrier type and density dependence of impact ionization characteristics in WSe<sub>2</sub>
Haeju Choi, Jinshu Li, Taeho Kang, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
May 13, 2026
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, et al.
Nanoscale
|
March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistor
Chanwoo Kang, Haeju Choi, Hyeonje Son, et al.
Page
of 12