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The Journal of Chemical Physics
|
April 8, 2024
Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems
Juri Kim, Subaek Lee, Yeongkyo Seo, et al.
Materials (Basel, Switzerland)
|
September 28, 2023
Double-Forming Mechanism of TaO<sub>x</sub>-Based Resistive Memory Device and Its Synaptic Applications
Dongyeol Ju, Sunghun Kim, Subaek Lee, et al.
International Journal of Molecular Sciences
|
September 9, 2022
Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application
Jongmin Park, Hyunwoong Park, Daewon Chung, et al.
Physical Chemistry Chemical Physics : PCCP
|
November 6, 2025
Multifunctional ferroelectric synaptic memristors based on HfAlO<sub><i>x</i></sub> with enhanced Pavlovian learning and physical reservoir computing systems
Gwangmin An, Seungjun Lee, Yeongkyo Seo, et al.
Materials (Basel, Switzerland)
|
December 23, 2022
Non-Volatile Memory and Synaptic Characteristics of TiN/CeO<sub>x</sub>/Pt RRAM Devices
Hoesung Ha, Juyeong Pyo, Yunseok Lee, et al.
Materials (Basel, Switzerland)
|
February 25, 2023
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO<sub>X</sub>/TaN Memristors
Youngboo Cho, Jihyung Kim, Myounggon Kang, et al.
The Journal of Chemical Physics
|
July 2, 2024
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing
Dongyeol Ju, Jungwoo Lee, Sungjun Kim, et al.
Materials (Basel, Switzerland)
|
September 28, 2023
Improved Uniformity of TaO<sub>x</sub>-Based Resistive Switching Memory Device by Inserting Thin SiO<sub>2</sub> Layer for Neuromorphic System
Dongyeol Ju, Sunghun Kim, Junwon Jang, et al.
Nanomaterials (Basel, Switzerland)
|
September 28, 2023
SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Materials (Basel, Switzerland)
|
February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Juyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
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Search research articles
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Showing results (61-70 of 299) with videos related to
Sort By:
Page
of 30
The Journal of Chemical Physics
|
April 8, 2024
Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems
Juri Kim, Subaek Lee, Yeongkyo Seo, et al.
Materials (Basel, Switzerland)
|
September 28, 2023
Double-Forming Mechanism of TaO<sub>x</sub>-Based Resistive Memory Device and Its Synaptic Applications
Dongyeol Ju, Sunghun Kim, Subaek Lee, et al.
International Journal of Molecular Sciences
|
September 9, 2022
Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application
Jongmin Park, Hyunwoong Park, Daewon Chung, et al.
Physical Chemistry Chemical Physics : PCCP
|
November 6, 2025
Multifunctional ferroelectric synaptic memristors based on HfAlO<sub><i>x</i></sub> with enhanced Pavlovian learning and physical reservoir computing systems
Gwangmin An, Seungjun Lee, Yeongkyo Seo, et al.
Materials (Basel, Switzerland)
|
December 23, 2022
Non-Volatile Memory and Synaptic Characteristics of TiN/CeO<sub>x</sub>/Pt RRAM Devices
Hoesung Ha, Juyeong Pyo, Yunseok Lee, et al.
Materials (Basel, Switzerland)
|
February 25, 2023
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO<sub>X</sub>/TaN Memristors
Youngboo Cho, Jihyung Kim, Myounggon Kang, et al.
The Journal of Chemical Physics
|
July 2, 2024
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing
Dongyeol Ju, Jungwoo Lee, Sungjun Kim, et al.
Materials (Basel, Switzerland)
|
September 28, 2023
Improved Uniformity of TaO<sub>x</sub>-Based Resistive Switching Memory Device by Inserting Thin SiO<sub>2</sub> Layer for Neuromorphic System
Dongyeol Ju, Sunghun Kim, Junwon Jang, et al.
Nanomaterials (Basel, Switzerland)
|
September 28, 2023
SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Materials (Basel, Switzerland)
|
February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Juyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Page
of 30