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Nanotechnology|June 7, 2021
Experimental study of threshold voltage shift for Si:HfO2based ferroelectric field effect transistorTaehwan Jung, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 28, 2019
Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect TransistorJinyoung Park, Changhwan ShinMicromachines|July 27, 2022
Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold VoltagesDongwoo Lee, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 22, 2018
Simulation Techniques for Nanoelectromechanical (NEM) RelayKaram Cho, Changhwan ShinMicromachines|December 23, 2020
Recent Studies on Supercapacitors with Next-Generation StructuresJuho Sung, Changhwan ShinNanotechnology|November 8, 2023
Grain-size adjustment in Hf0.5Zr0.5O2ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitorJiyeong Yoon, Yejoo Choi, Changhwan ShinMicromachines|August 27, 2021
Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate DeviceJeewon Park, Wansu Jang, Changhwan ShinNano Convergence|June 3, 2020
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorChankeun Yoon, Seungjun Moon, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 28, 2019
Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect TransistorHyungki Cho, Jaemin Shin, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 28, 2019
Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on HysteresisEunah Ko, Jaemin Shin, Changhwan ShinPageof 5