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Xiaoshi Jin

Showing results (1-10 of 28) with videos related to

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Scientific Reports|April 6, 2023
A dual doping nonvolatile reconfigurable FETXiaoshi Jin, Shouqiang Zhang, Xi Liu
Plos One|May 24, 2023
A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gatesXiaoshi Jin, Shouqiang Zhang, Xi Liu
Heliyon|October 9, 2023
A highly integrated nonvolatile bidirectional RFET with low leakage currentXi Liu, Mengmeng Li, Shouqiang Zhang, et al.
Frontiers in Medicine|February 23, 2026
IgG4-related sclerosing cholangitis: navigating diagnostic dilemmas and the challenge of relapseXiangxiang Ren, Xiaoshi Jin, Litao Liu, et al.
Sensors (Basel, Switzerland)|October 16, 2025
Image Super-Resolution Reconstruction Network Based on Structural Reparameterization and Feature ReuseTianyu Li, Xiaoshi Jin, Qiang Liu, et al.
Nanoscale Research Letters|February 5, 2019
A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain ContactsXi Liu, Zhengliang Xia, Xiaoshi Jin, et al.
Nanoscale Research Letters|October 14, 2020
A Highly Sensitive FET-Type Humidity Sensor with Inkjet-Printed Pt-In<sub>2</sub>O<sub>3</sub> Nanoparticles at Room TemperatureMeile Wu, Zhanyu Wu, Xiaoshi Jin, et al.
Discover Nano|June 29, 2023
A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward currentXiaoshi Jin, Shouqiang Zhang, Chunrong Zhao, et al.
Heliyon|March 10, 2023
A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistorXiaoshi Jin, Shouqiang Zhang, Mengmeng Li, et al.
Plos One|May 19, 2023
A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistorXi Liu, Mengmeng Li, Meile Wu, et al.
Pageof 3

Showing results (1-10 of 28) with videos related to

Sort By:
Pageof 3
Scientific Reports|April 6, 2023
A dual doping nonvolatile reconfigurable FETXiaoshi Jin, Shouqiang Zhang, Xi Liu
Plos One|May 24, 2023
A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gatesXiaoshi Jin, Shouqiang Zhang, Xi Liu
Heliyon|October 9, 2023
A highly integrated nonvolatile bidirectional RFET with low leakage currentXi Liu, Mengmeng Li, Shouqiang Zhang, et al.
Frontiers in Medicine|February 23, 2026
IgG4-related sclerosing cholangitis: navigating diagnostic dilemmas and the challenge of relapseXiangxiang Ren, Xiaoshi Jin, Litao Liu, et al.
Sensors (Basel, Switzerland)|October 16, 2025
Image Super-Resolution Reconstruction Network Based on Structural Reparameterization and Feature ReuseTianyu Li, Xiaoshi Jin, Qiang Liu, et al.
Nanoscale Research Letters|February 5, 2019
A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain ContactsXi Liu, Zhengliang Xia, Xiaoshi Jin, et al.
Nanoscale Research Letters|October 14, 2020
A Highly Sensitive FET-Type Humidity Sensor with Inkjet-Printed Pt-In<sub>2</sub>O<sub>3</sub> Nanoparticles at Room TemperatureMeile Wu, Zhanyu Wu, Xiaoshi Jin, et al.
Discover Nano|June 29, 2023
A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward currentXiaoshi Jin, Shouqiang Zhang, Chunrong Zhao, et al.
Heliyon|March 10, 2023
A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistorXiaoshi Jin, Shouqiang Zhang, Mengmeng Li, et al.
Plos One|May 19, 2023
A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistorXi Liu, Mengmeng Li, Meile Wu, et al.
Pageof 3