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Materials (Basel, Switzerland)
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November 8, 2017
Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact
Yu-Ru Lin, Wan-Ting Tsai, Yung-Chun Wu, et al.
Journal of Nanoscience and Nanotechnology
|
March 14, 2012
Fabrication and characterization of twin poly-Si thin film transistors EEPROM with a nitride charge trapping layer
Min-Feng Hung, Yung-Chun Wu, Ji-Hong Chiang, et al.
International Journal of Medical Sciences
|
January 2, 2025
Ginsenosides, salidroside, and syringin complex exhibits anti-fatigue in exhaustive exercise rats
Yung-Chun Wu, Yu Zhi Lian, Hongwei Zhao, et al.
Nanomaterials (Basel, Switzerland)
|
July 9, 2022
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO<sub>2</sub> for Sub-60-mV/Decade Subthreshold Slope for Low Power Application
Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, et al.
Nanoscale Research Letters
|
June 20, 2015
Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure
Ya-Chi Cheng, Hung-Bin Chen, Jun-Ji Su, et al.
Nanomaterials (Basel, Switzerland)
|
October 27, 2022
Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)
Chong-Jhe Sun, Chen-Han Wu, Yi-Ju Yao, et al.
Nanoscale Research Letters
|
July 24, 2013
Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
Mu-Shih Yeh, Yung-Chun Wu, Min-Feng Hung, et al.
Nanoscale Research Letters
|
August 23, 2014
Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
Ya-Chi Cheng, Hung-Bin Chen, Ming-Hung Han, et al.
Nanoscale Research Letters
|
November 19, 2014
A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
Mu-Shih Yeh, Yung-Chun Wu, Kuan-Cheng Liu, et al.
Materials (Basel, Switzerland)
|
May 7, 2025
Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH<sub>3</sub> Plasma-Optimized Interfaces
Yi-Ju Yao, Yu-Min Fu, Yu-Hung Chen, et al.
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Search research articles
Search
Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
Materials (Basel, Switzerland)
|
November 8, 2017
Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact
Yu-Ru Lin, Wan-Ting Tsai, Yung-Chun Wu, et al.
Journal of Nanoscience and Nanotechnology
|
March 14, 2012
Fabrication and characterization of twin poly-Si thin film transistors EEPROM with a nitride charge trapping layer
Min-Feng Hung, Yung-Chun Wu, Ji-Hong Chiang, et al.
International Journal of Medical Sciences
|
January 2, 2025
Ginsenosides, salidroside, and syringin complex exhibits anti-fatigue in exhaustive exercise rats
Yung-Chun Wu, Yu Zhi Lian, Hongwei Zhao, et al.
Nanomaterials (Basel, Switzerland)
|
July 9, 2022
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO<sub>2</sub> for Sub-60-mV/Decade Subthreshold Slope for Low Power Application
Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, et al.
Nanoscale Research Letters
|
June 20, 2015
Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure
Ya-Chi Cheng, Hung-Bin Chen, Jun-Ji Su, et al.
Nanomaterials (Basel, Switzerland)
|
October 27, 2022
Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)
Chong-Jhe Sun, Chen-Han Wu, Yi-Ju Yao, et al.
Nanoscale Research Letters
|
July 24, 2013
Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
Mu-Shih Yeh, Yung-Chun Wu, Min-Feng Hung, et al.
Nanoscale Research Letters
|
August 23, 2014
Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
Ya-Chi Cheng, Hung-Bin Chen, Ming-Hung Han, et al.
Nanoscale Research Letters
|
November 19, 2014
A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
Mu-Shih Yeh, Yung-Chun Wu, Kuan-Cheng Liu, et al.
Materials (Basel, Switzerland)
|
May 7, 2025
Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH<sub>3</sub> Plasma-Optimized Interfaces
Yi-Ju Yao, Yu-Min Fu, Yu-Hung Chen, et al.
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of 2