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Updated: May 9, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
Mu-Shih Yeh1, Yung-Chun Wu, Min-Feng Hung
1Department of Engineering and System Science, National Tsing Hua University, 101, Section 2 Kuang Fu Road, Hsinchu, 30013, Taiwan. ycwu@ess.nthu.edu.tw.
Abstract:
This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
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