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Journal of Nanoscience and Nanotechnology|April 28, 2019
Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory DeviceHyun-Seok Choi, Won-Ju ChoJournal of Nanoscience and Nanotechnology|April 28, 2019
Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ SidewallRyoongbin Lee, Kitae Lee, Sihyun Kim, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Polysilicon-Based Synaptic Transistor and Array Structure for Short/Long-Term MemoryMyung-Hyun Baek, Taejin Jang, Min-Woo Kwon, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect TransistorsSo-Yeong Kim, Hyeong-Sub Song, Sung-Kyu Kwon, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect TransistorHyungki Cho, Jaemin Shin, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 28, 2019
Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on HysteresisEunah Ko, Jaemin Shin, Changhwan ShinJournal of Nanoscience and Nanotechnology|April 28, 2019
Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate StacksHyeong-Sub Song, So-Yeong Kim, Dong-Hwan Lim, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward CurrentJong-Ho Bae, Suhwan Lim, Dongseok Kwon, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Capacitance-Voltage Characteristics Analysis of Indium Zinc Oxide Thin Film Transistors Based Ultraviolet Light IrradiationFei Shan, Hong-Bo Guo, Han-Sang Kim, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low VoltageSang-Joon Park, Byoung-Soo Yu, Tae-Jun HaPageof 1,898