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Updated: Jun 21, 2025

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在碳纳米管阵列晶体管的网关堆中的接口状态

Yifan Liu1, Sujuan Ding2, Weili Li3

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.

ACS nano
|July 8, 2024
PubMed
概括

研究人员优化了对齐碳纳米管场效应晶体管 (A-CNT FETs) 中的接口状态. 这项研究实现了创纪录的低接口状态密度,提高了未来节能电子设备的设备性能.

关键词:
对齐的碳纳米管阵列.门的效率 门的效率高性能 MOSFETs 的使用.高-κ 门的堆.接口状态表示接口状态.用氧增强的ALD过程.

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