在I/O连接元件上的热循环和高温应力之间的交叉比较
Mamta Dhyani1, Tsuriel Avraham1, Joseph B Bernstein1
1Department of Electrical and Electronic Engineering, Ariel University, Ariel 40700, Israel.
Micromachines
|January 28, 2026
概括
这项关于现场可编程门阵列 (FPGA) I/O 路径的研究揭示了在不同压力条件下不同的降解机制. 阻力漂移监测可以区分电子系统的点死和包装级老化.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
背景情况:
- 现场可编程门阵列 (FPGA) 在现代电子产品中至关重要.
- 了解FPGA I/O路径在压力下的可靠性对于系统寿命至关重要.
- 降解机制可以根据应用的电气和热应力条件而有所不同.
研究的目的:
- 为了研究FPGA I/O路径在电和热应力组合下的电阻漂移.
- 区分即死和包装级降解机制.
- 建立电子系统可靠性评估和自我监测的基础.
主要方法:
- 在测试中使用了Xilinx Spartan-6 FPGA.
- 采用多重测量方法来测量轨道电阻,电压和电流.
- 应用的加速应力模式:高温停留 (80-120°C) 和热循环 (80-140°C).
主要成果:
- 两种应力模式都显示了随着时间的推移而发生的次线性 (电力规律) 阻力变化.
- 阿雷尼乌斯分析显示了不同的激活能量: ~0.62 eV用于停留, ~1.3 eV用于骑自行车.
- 较低的激活能量与即死降解相关;更高的能量与包装级热力学损伤相关.
结论:
- 在FPGA I/O路径中的阻力漂移有效地区分了以设备为中心和以包为中心的老化.
- 这些发现支持基于电阻的电子系统可靠性监测的发展.
- 该研究提供了关于FPGA老化机制的见解,以改善设计和维护.
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