Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm
Christelle Monat1, Blandine Alloing, Carl Zinoni
1Ecole Polytechnique Fédérale de Lausanne, Institute of Photonics and Quantum Electronics, Lausanne, Switzerland. monat@physics.usyd.edu.au
Nano Letters
|July 13, 2006
Summary
Researchers developed a new light-emitting-diode structure for single quantum dot excitation. This enables efficient nanoscale devices emitting single photons at 1300 nm for quantum cryptography applications.
Area of Science:
- Semiconductor physics
- Quantum optics
- Nanotechnology
Background:
- Single quantum dots are crucial for quantum information technologies.
- Efficient light emission at 1300 nm is vital for fiber-based quantum communication.
Purpose of the Study:
- To demonstrate a novel light-emitting-diode (LED) structure for selective excitation of single quantum dots.
- To enable efficient nanoscale active devices operating at 1300 nm.
Main Methods:
- Utilizing nanoscale current injection through an oxide aperture.
- Fabricating InAs/GaAs quantum dot structures.
- Performing low-temperature electroluminescence measurements.
Main Results:
- Achieved selective excitation of single InAs/GaAs quantum dots.
- Observed discrete, narrow emission lines around 1300 nm (linewidth ~75 microeV) at ultralow currents.
- Identified emission from single excitons and multiexcitons.
Conclusions:
- The novel LED structure enables efficient nanoscale devices for single-photon emission at 1300 nm.
- This technology is suitable for developing single-photon-emitting diodes for quantum cryptography.
