Organic depth profiling of a nanostructured delta layer reference material using large argon cluster ions.

Area of Science:

• Surface Science
• Materials Analysis
• Mass Spectrometry

Background:

• Cluster ion beams have advanced organic surface analysis and depth profiling using time-of-flight secondary ion mass spectrometry (TOF-SIMS).
• Existing ion beams like SF(5)(+) and C(60)(n+) are effective for many organic materials but have limitations.

Purpose of the Study:

• To investigate the potential of novel argon cluster ions (Ar(500)(+) to Ar(1000)(+)) for organic depth profiling.
• To evaluate the performance of argon cluster ions on a model organic sample.

Main Methods:

• Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was employed.
• Analysis was performed on an organic delta layer reference sample with ultrathin Irganox 3114 layers embedded in Irganox 1010.
• Argon cluster ions (Ar(500)(+) to Ar(1000)(+)) were used as the primary ion beam.

Main Results:

• Argon cluster ions demonstrated a constant high sputtering yield up to a depth of approximately 390 nm.
• Extremely low sputter-induced roughness (<5 nm) was observed.
• While depth resolution was limited by an instrumental artifact, the results indicate potential for high resolution.

Conclusions:

• Argon cluster ions offer significant benefits for organic depth profiling, including high sputtering yields and low surface roughness.
• These ions show strong potential for achieving high depth resolution in TOF-SIMS analysis of organic materials.
• Argon cluster ions may become important tools for depth profiling various organic materials.