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Piezoresistive Cantilever Performance-Part I: Analytical Model for Sensitivity
Sung-Jin Park1, Joseph C Doll, Beth L Pruitt
1The authors are with the Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 USA.
Journal of Microelectromechanical Systems : a Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems
|March 26, 2010
Summary
This study introduces an improved analytical model for silicon piezoresistive transducers, accounting for dopant profile distortions. The new model enhances accuracy for nonuniform doping, aiding in the design of sensitive piezoresistive devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid-State Physics
Background:
- Accurate modeling of piezoresistors is crucial for silicon piezoresistive transducer design.
- Ion implantation processes cause dopant profile distortion due to diffusion, impacting model accuracy.
- Existing models fail to address concentration-dependent piezoresistance and nonuniform dopant profiles.
Purpose of the Study:
- To develop an accurate analytical model for piezoresistor resistance change, considering distorted dopant profiles.
- To introduce efficiency and geometry factors to separate process and design parameters.
- To provide a practical tool for designing silicon piezoresistive transducers.
Main Methods:
- Extended previous analytical models by incorporating efficiency and geometry factors.
- Developed a lookup table for the efficiency factor across various process conditions.
- Validated the model using extensive simulations (9200 TSUPREM4) and experimental fabrication (50 devices).
Main Results:
- The new analytical model accurately predicts piezoresistor resistance changes even with nonuniform dopant profiles.
- The efficiency factor effectively decouples fabrication process parameters from cantilever design parameters.
- Experimental validation confirmed the model's accuracy in predicting the sensitivity of piezoresistive cantilevers.
Conclusions:
- The developed analytical model offers improved accuracy for silicon piezoresistive transducers with diffused dopant profiles.
- The introduction of efficiency and geometry factors simplifies the design process for engineers.
- The model's principles are extensible to other piezoresistive sensors, such as membrane pressure sensors.
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