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Atom Probe Tomography Analysis of Exsolved Mineral Phases
Published on: October 25, 2019
Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography
Manuel Roussel1, Etienne Talbot, Fabrice Gourbilleau
1Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.
Nanoscale Research Letters
|June 30, 2011
Summary
Atom probe tomography reveals atomic-level details of silicon nanoclusters within silicon oxide/silicon dioxide multilayers. This advanced technique complements traditional methods for characterizing nanostructural properties crucial for optoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Silicon nanoclusters are critical for advanced optoelectronic and microelectronic devices.
- Their physical properties depend heavily on nanostructural characteristics like size, composition, and interface nature.
- Conventional methods (TEM, EFTEM, EELS) provide high-resolution analysis but can be complemented.
Purpose of the Study:
- To utilize atom probe tomography (APT) for detailed atomic-level analysis of silicon nanoclusters.
- To study a specific multilayer (ML) system composed of silicon oxide (SiO) and silicon dioxide (SiO2) layers.
- To demonstrate APT as a complementary technique for understanding nanostructure-property relationships.
Main Methods:
- Sample preparation for atom probe tomography.
- Atom probe analysis of the silicon nanocluster/SiO2 multilayer system.
- Data treatment and analysis for atomic-scale structural information.
Main Results:
- Detailed atomic-scale description of the silicon nanoclusters within the SiO/SiO2 ML.
- Complementary structural information obtained via APT, enhancing understanding beyond conventional techniques.
- Characterization of nanostructural features (size, distribution, interfaces) at the atomic level.
Conclusions:
- Atom probe tomography is a powerful technique for characterizing silicon nanoclusters at the atomic scale.
- APT provides crucial complementary data for understanding nanostructure-property relationships in optoelectronic materials.
- The study successfully describes the atomic structure of Si nanoclusters in a SiO/SiO2 ML system.
