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Updated: May 29, 2026

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
Published on: July 12, 2016
Charge state dependent energy deposition by ion impact
R E Lake1, J M Pomeroy, H Grube
1Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. russell.lake@nist.gov
We measured craters in dielectric films created by xenon ion impacts. Crater depth and electrical conductance increased with ion charge, revealing energy deposition during impact.
Area of Science:
- Materials Science
- Surface Science
- Ion-Solid Interactions
Background:
- Ion bombardment can create surface modifications like craters.
- Dielectric films are crucial in electronic devices.
- Understanding ion-induced damage is vital for material stability.
Purpose of the Study:
- To quantify crater formation in thin dielectric films.
- To investigate the relationship between projectile charge state and crater characteristics.
- To determine the energy deposition during ion impact.
Main Methods:
- Utilized tunnel junction devices with ion-irradiated barriers.
- Measured electrical conductance changes as a function of projectile charge (Q).
- Applied a heated spike model to estimate crater energy.
Main Results:
- Electrical conductance increased by 4 orders of magnitude with increasing Xe ion charge (Q).
- Crater depths ranged from 2 to 11 Å.
- Energy required for crater formation was 8–25 keV.
- At least 27% of projectile neutralization energy was deposited into the film.
Conclusions:
- Projectile charge state significantly influences crater formation in dielectric films.
- The study provides insights into energy deposition mechanisms during ion-solid interactions.
- Results are relevant for understanding radiation effects in thin films.
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